Conjugated polymers

ABSTRACT

The invention relates to novel conjugated polymers containing one or more diindeno-thieno[3,2-b]thiophene based polycyclic repeating units, to methods for their preparation and educts or intermediates used therein, to polymer blends, mixtures and formulations containing them, to the use of the polymers, polymer blends, mixtures and formulations as organic semiconductors in organic electronic (OE) devices, especially in organic photovoltaic (OPV) devices and organic photodetectors (OPD), and to OE, OPV and OPD devices comprising these polymers, polymer blends, mixtures or formulations.

TECHNICAL FIELD

The invention relates to novel conjugated polymers containing one ormore diindeno-thieno[3,2-b]thiophene based polycyclic repeating units,to methods for their preparation and educts or intermediates usedtherein, to polymer blends, mixtures and formulations containing them,to the use of the polymers, polymer blends, mixtures and formulations asorganic semiconductors in organic electronic (OE) devices, especially inorganic photovoltaic (OPV) devices and organic photodetectors (OPD), andto OE, OPV and OPD devices comprising these polymers, polymer blends,mixtures or formulations.

BACKGROUND

In recent years, there has been development of organic semiconducting(OSC) materials in order to produce more versatile, lower costelectronic devices. Such materials find application in a wide range ofdevices or apparatus, including organic field effect transistors(OFETs), organic light emitting diodes (OLEDs), organic photodetectors(OPDs), organic photovoltaic (OPV) cells, sensors, memory elements andlogic circuits to name just a few. The organic semiconducting materialsare typically present in the electronic device in the form of a thinlayer, for example of between 50 and 300 nm thickness.

One particular area of importance are OFETs. The performance of OFETdevices is principally based upon the charge carrier mobility of thesemiconducting material and the current on/off ratio, so the idealsemiconductor should have a low conductivity in the off state, combinedwith high charge carrier mobility (>1×10⁻³ cm² V⁻¹ s⁻¹). In addition, itis important that the semiconducting material is stable to oxidationi.e. it has a high ionisation potential, as oxidation leads to reduceddevice performance. Further requirements for the semiconducting materialare good processability, especially for large-scale production of thinlayers and desired patterns, and high stability, film uniformity andintegrity of the organic semiconductor layer.

In prior art, various materials have been proposed for use as organicsemiconductors in OFETs, including small molecules like for examplepentacene, and polymers like for example polyhexylthiophene. However,the materials and devices investigated so far do still have severaldrawbacks, and their properties, especially the processability,charge-carrier mobility, on/off ratio and stability do still leave roomfor further improvement

Another particular area of importance is organic photovoltaics (OPV).Conjugated polymers have found use in OPVs as they allow devices to bemanufactured by solution-processing techniques such as spin casting, dipcoating or ink jet printing. Solution processing can be carried outcheaper and on a larger scale compared to the evaporative techniquesused to make inorganic thin film devices. Currently, polymer basedphotovoltaic devices are achieving efficiencies above 8%.

In order to obtain ideal solution-processible OSC molecules two basicfeatures are essential, firstly a rigid n-conjugated core unit to formthe backbone, and secondly a suitable functionality attached to thearomatic core unit in the OSC backbone. The former extends π-π overlaps,defines the primary energy levels of the highest occupied and lowestunoccupied molecular orbitals (HOMO and LUMO), enables both chargeinjection and transport, and facilitates optical absorption. The latterfurther fine-tunes the energy levels and enables solubility and henceprocessability of the materials as well as π-π interactions of themolecular backbones in the solid state.

A high degree of molecular planarity reduces the energetic disorder ofOSC backbones and accordingly enhances charge carrier mobilities.Linearly fusing aromatic rings is an efficient way of achieving maximumplanarity with extended π-π conjugation of OSC molecules. Accordingly,most of the known polymeric OSCs with high charge carrier mobilities aregenerally composed of fused ring aromatic systems and aresemicrystalline in their solid states. On the other hand, such fusedaromatic ring systems are often difficult to synthesize, and do alsooften show poor solubility in organc solvents, which renders theirprocessing as thin films for use in OE devices more difficult. Also, theOSC materials disclosed in prior art still leave room for furtherimprovement regarding their electronic properties.

Thus there is still a need for organic semiconducting (OSC) materialsfor use in electronic devices like OFETs, which have advantageousproperties, in particular good processability, especially a highsolubility in organic solvents, good structural organization andfilm-forming properties, high charge-carrier mobility, high on/off ratioin transistor devices, high oxidative stability and long lifetime inelectronic devices. In addition, the OSC materials should be easy tosynthesize, especially by methods suitable for mass production. For usein OPV cells, the OSC materials should have a low bandgap, which enableimproved light harvesting by the photoactive layer and can lead tohigher cell efficiencies, compared to OSC materials of the prior art.

It was an aim of the present invention to provide OSC materials thatprovide one or more of the above-mentioned advantageous properties.Another aim of the invention was to extend the pool of OSC materialsavailable to the expert. Other aims of the present invention areimmediately evident to the expert from the following detaileddescription. The inventors of the present invention have found that oneor more of the above aims can be achieved by providing conjugatedpolymers as disclosed and claimed hereinafter. These polymers compriseone or more diindenothieno[3,2-b]thiophene units of formula I as shownhereinafter, which are tetrasubstituted at the cyclopentadiene ringswith benzene rings that comprise a C16-C24 alkyl chain in para position.These longer alkyl chains allow solubility of the semi-conductingpolymer in non-chlorinated solvents such as toluene and xylene allowingthe use of these polymers in industrial applications such as their usein OFET devices. Furthermore, without wishing to be bound to a specifictheory, the inventors believe that the longer alkyl chains improve theinterconnectivity between polymer aggregates within the polymerthin-films, which facilitates charge hopping between different polymeraggregates and yields high charge carrier mobility in transistordevices. The polymers optionally comprise further aromatic orheteroaromatic co-units.

Surprisingly it was found that these enlarged fused ring systems, andthe polymers containing them, still show sufficient solubility inorganic solvents, and provide improved electronic properties like highcharge carrier mobility and on/off ratios especially when being used asOSC semiconductor in OE electronic devices like OFETs. Both the homo-and co-polymers can be prepared through known transition metal catalysedpolycondensation reactions. As a result the polymers of the presentinvention were found to be attractive candidates for solutionprocessable organic semiconductors both for use in transistorapplications and photovoltaic applications.

It was also found that copolymers according to the present inventioncomprising diindenothieno[3,2-b]thiophene units of formula I and one ormore electron donor units show advantageous properties such as highcharge carrier mobility and high on/off ratios in transistor devices fora polymer semi-conductor. Additionally, the polymers are soluble innon-chlorinated solvents such as toluene and xylene and thus isbeneficial for their industrial use in OE electronic devices such asOFETs.

Y.-J. Cheng et al., Chem. Commun., 2012, 48, 3203, disclose polymerswith thieno[3,2-b]thiophene based polycyclic units (1) as shown below,wherein R is an octyl group. However, polymers with C₁₆-C₂₄ alkyl chainsand/or with additional donor units as claimed in the present inventionare not disclosed. Also, a blend of such a polymer with PCBM wasdisclosed to have only very low mobilities of 1×10⁻⁴ cm²/Vs.

US 2013/0237676 A1 discloses a copolymer comprising the above monomerunit and an electron acceptor unit like benzothiadiazole orbis-thienyl-benzothiadiazole. However, polymers with C₁₆-C₂₄ alkylchains and/or with additional donor units as claimed hereinafter are notdisclosed.

SUMMARY

The invention relates to a conjugated polymer comprising one or moredivalent units of formula I

wherein R, on each occurrence identically or differently, denotesstraight-chain or branched alkyl with 16 to 24 C-atoms which isoptionally fluorinated.

The invention further relates to a formulation comprising one or morepolymers comprising a unit of formula I and one or more solvents,preferably selected from organic solvents.

The invention further relates to the use of units of formula I aselectron donor units in semiconducting polymers.

The invention further relates to conjugated polymers comprising one ormore repeating units of formula I and/or one or more groups selectedfrom aryl and heteroaryl groups that are optionally substituted, andwherein at least one repeating unit in the polymer is a unit of formulaI.

The invention further relates to monomers containing a unit of formula Iand further containing one or more reactive groups which can be reactedto form a conjugated polymer as described above and below.

The invention further relates to semiconducting polymers comprising oneor more units of formula I and one or more additional units which aredifferent from formula I and have electron donor properties.

The invention further relates to semiconducting polymers comprising oneor more units of formula I as electron donor units, and preferablyfurther comprising one or more units having electron acceptorproperties.

The invention further relates to the use of the polymers according tothe present invention as electron donor or p-type semiconductor.

The invention further relates to the use of the polymers according tothe present invention as electron donor component in a semiconductingmaterial, formulation, polymer blend, device or component of a device.

The invention further relates to a semiconducting material, formulation,polymer blend, device or component of a device comprising a polymeraccording to the present invention as electron donor component, andpreferably further comprising one or more compounds or polymers havingelectron acceptor properties.

The invention further relates to a mixture or polymer blend comprisingone or more polymers according to the present invention and one or moreadditional compounds which are preferably selected from compounds havingone or more of semiconducting, charge transport, hole or electrontransport, hole or electron blocking, electrically conducting,photoconducting or light emitting properties.

The invention further relates to a mixture or polymer blend as describedabove and below, which comprises one or more polymers of the presentinvention and one or more n-type organic semiconductor compounds,preferably selected from fullerenes or substituted fullerenes.

The invention further relates to a formulation comprising one or morepolymers, formulations, mixtures or polymer blends according to thepresent invention and optionally one or more solvents, preferablyselected from organic solvents.

The invention further relates to the use of a polymer, formulation,mixture or polymer blend of the present invention as charge transport,semiconducting, electrically conducting, photoconducting or lightemitting material, or in an optical, electrooptical, electronic,electroluminescent or photoluminescent device, or in a component of sucha device or in an assembly comprising such a device or component.

The invention further relates to a charge transport, semiconducting,electrically conducting, photoconducting or light emitting materialcomprising a polymer, formulation, mixture or polymer blend according tothe present invention.

The invention further relates to an optical, electrooptical, electronic,electroluminescent or photoluminescent device, or a component thereof,or an assembly comprising it, which comprises a polymer, formulation,mixture or polymer blend, or comprises a charge transport,semiconducting, electrically conducting, photoconducting or lightemitting material, according to the present invention.

The optical, electrooptical, electronic, electroluminescent andphotoluminescent devices include, without limitation, organic fieldeffect transistors (OFET), organic thin film transistors (OTFT), organiclight emitting diodes (OLED), organic light emitting transistors (OLET),organic photovoltaic devices (OPV), organic photodetectors (OPD),organic solar cells, laser diodes, Schottky diodes, photoconductors andphotodetectors.

The components of the above devices include, without limitation, chargeinjection layers, charge transport layers, interlayers, planarisinglayers, antistatic films, polymer electrolyte membranes (PEM),conducting substrates and conducting patterns.

The assemblies comprising such devices or components include, withoutlimitation, integrated circuits (IC), radio frequency identification(RFID) tags or security markings or security devices containing them,flat panel displays or backlights thereof, electrophotographic devices,electrophotographic recording devices, organic memory devices, sensordevices, biosensors and biochips.

In addition the compounds, polymers, formulations, mixtures or polymerblends of the present invention can be used as electrode materials inbatteries and in components or devices for detecting and discriminatingDNA sequences.

BRIEF DESCRIPTION OF THE DRAWINGS

FIG. 1 shows the transfer characteristics and the charge carriermobility of a top-gate OFET according to Example 4 of the presentinvention.

DETAILED DESCRIPTION

The polymers of the present invention are easy to synthesize and exhibitadvantageous properties. They show good processability for the devicemanufacture process, high solubility in organic solvents, and areespecially suitable for large scale production using solution processingmethods.

The units of formula I are especially suitable as (electron) donor unitin both n-type and p-type semiconducting compounds, polymers orcopolymers, in particular copolymers containing both donor and acceptorunits, and for the preparation of blends of p-type and n-typesemiconductors which are suitable for use in BHJ photovoltaic devices.

The repeating units of formula I contain an enlarged system of fusedaromatic rings, which creates numerous benefits in developing novel highperformance OSC materials. Firstly, a large number of fused aromaticrings along the long axis of the core structure increases the overallplanarity and reduces the number of the potential twists of theconjugated molecular backbone. Elongation of the π-π structure ormonomer increases the extent of conjugation which facilitates chargetransport along the polymer backbone. Secondly, the high proportion ofsulphur atoms in the molecular backbone through the presence of fusedthiophene rings promotes more intermolecular short contacts, whichbenefits charge hopping between molecules. Thirdly, the large number offused rings leads to an increased proportion of ladder structure in theOSC polymer main chain. This forms a broader and more intense absorptionband resulting in improved solar light harvesting compared with priorart materials. Additionally but not lastly, fusing aromatic rings canmore efficiently modify the HOMO and LUMO energy levels and bandgaps ofthe target monomer structures compared with periphery substitutions.

Besides, the polymers of the present invention show the followingadvantageous properties:

-   i) The thieno[3,2-b]thiophene based units of formula I are expected    to exhibit a co-planar structure. Adopting a highly co-planar    structure in the solid-state is beneficial for charge transport.-   ii) The introduction of electron rich thiophene units into the    thieno[3,2-b]thiophene based polycyclic will raise the HOMO level of    the polymer when compared with indenofluorene polymers. This is    expected to result in improved charge-injection into the polymer    when applied as an organic semiconductor in transistor devices.    Additionally, the HOMO level for the homopolymer will be inherently    lower than that of P3HT and other polythiophene materials, so that    the polymer has improved oxidative stability.-   iii) The optoelectronic properties of conjugated polymers vary    significantly based upon the intrinsic electron density within each    repeating unit and the degree of conjugation between the repeating    units along the polymer backbone. By fusing additional aromatic    rings along the long axis of the thieno[3,2-b]thiophene based    polycyclic structure, the conjugation within the resultant monomers    and consequently along the polymers can be extended, and the impact    of potential “twists” between repeating units can be minimised.-   iv) Additional fine-tuning and further modification of the    thieno[3,2-b]thiophene based polycyclic or co-polymerisation with    appropriate co-monomer(s) should afford candidate materials for    organic electronic applications.

The synthesis of the unit of formula I, its functional derivatives,compounds, homopolymers, and co-polymers can be achieved based onmethods that are known to the skilled person and described in theliterature, as will be further illustrated herein.

As used herein, the term “polymer” will be understood to mean a moleculeof high relative molecular mass, the structure of which essentiallycomprises the multiple repetition of units derived, actually orconceptually, from molecules of low relative molecular mass (Pure Appl.Chem., 1996, 68, 2291). The term “oligomer” will be understood to mean amolecule of intermediate relative molecular mass, the structure of whichessentially comprises a small plurality of units derived, actually orconceptually, from molecules of lower relative molecular mass (PureAppl. Chem., 1996, 68, 2291). In a preferred meaning as used hereinpresent invention a polymer will be understood to mean a compoundhaving >1, i.e. at least 2 repeat units, preferably ≧5 repeat units, andan oligomer will be understood to mean a compound with >1 and <10,preferably <5, repeat units.

Further, as used herein, the term “polymer” will be understood to mean amolecule that encompasses a backbone (also referred to as “main chain”)of one or more distinct types of repeat units (the smallestconstitutional unit of the molecule) and is inclusive of the commonlyknown terms “oligomer”, “copolymer”, “homopolymer” and the like.Further, it will be understood that the term polymer is inclusive of, inaddition to the polymer itself, residues from initiators, catalysts andother elements attendant to the synthesis of such a polymer, where suchresidues are understood as not being covalently incorporated thereto.Further, such residues and other elements, while normally removed duringpost polymerization purification processes, are typically mixed orco-mingled with the polymer such that they generally remain with thepolymer when it is transferred between vessels or between solvents ordispersion media.

As used herein, in a formula showing a polymer or a repeat unit, likefor example a unit of formula I or a polymer of formula III or IV, ortheir subformulae, an asterisk (*) will be understood to mean a chemicallinkage to an adjacent unit or to a terminal group in the polymerbackbone. In a ring, like for example a benzene or thiophene ring, anasterisk (*) will be understood to mean a C atom that is fused to anadjacent ring.

As used herein, the terms “repeat unit”, “repeating unit” and “monomericunit” are used interchangeably and will be understood to mean theconstitutional repeating unit (CRU), which is the smallestconstitutional unit the repetition of which constitutes a regularmacromolecule, a regular oligomer molecule, a regular block or a regularchain (Pure Appl. Chem., 1996, 68, 2291). As further used herein, theterm “unit” will be understood to mean a structural unit which can be arepeating unit on its own, or can together with other units form aconstitutional repeating unit.

As used herein, a “terminal group” will be understood to mean a groupthat terminates a polymer backbone. The expression “in terminal positionin the backbone” will be understood to mean a divalent unit or repeatunit that is linked at one side to such a terminal group and at theother side to another repeat unit. Such terminal groups include endcapgroups, or reactive groups that are attached to a monomer forming thepolymer backbone which did not participate in the polymerisationreaction, like for example a group having the meaning of R⁵ or R⁶ asdefined below.

As used herein, the term “endcap group” will be understood to mean agroup that is attached to, or replacing, a terminal group of the polymerbackbone. The endcap group can be introduced into the polymer by anendcapping process. Endcapping can be carried out for example byreacting the terminal groups of the polymer backbone with amonofunctional compound (“endcapper”) like for example an alkyl- orarylhalide, an alkyl- or arylstannane or an alkyl- or arylboronate. Theendcapper can be added for example after the polymerisation reaction.Alternatively the endcapper can be added in situ to the reaction mixturebefore or during the polymerisation reaction. In situ addition of anendcapper can also be used to terminate the polymerisation reaction andthus control the molecular weight of the forming polymer. Typical endcapgroups are for example H, phenyl and lower alkyl.

As used herein, the term “small molecule” will be understood to mean amonomeric compound which typically does not contain a reactive group bywhich it can be reacted to form a polymer, and which is designated to beused in monomeric form. In contrast thereto, the term “monomer” unlessstated otherwise will be understood to mean a monomeric compound thatcarries one or more reactive functional groups by which it can bereacted to form a polymer.

As used herein, the terms “donor” or “donating” and “acceptor” or“accepting” will be understood to mean an electron donor or electronacceptor, respectively. “Electron donor” will be understood to mean achemical entity that donates electrons to another compound or anothergroup of atoms of a compound. “Electron acceptor” will be understood tomean a chemical entity that accepts electrons transferred to it fromanother compound or another group of atoms of a compound (see also U.S.Environmental Protection Agency, 2009, Glossary of technical terms,http://www.epa.gov/oust/cat/TUMGLOSS.HTM).

As used herein, the term “n-type” or “n-type semiconductor” will beunderstood to mean an extrinsic semiconductor in which the conductionelectron density is in excess of the mobile hole density, and the term“p-type” or “p-type semiconductor” will be understood to mean anextrinsic semiconductor in which mobile hole density is in excess of theconduction electron density (see also, J. Thewlis, Concise Dictionary ofPhysics, Pergamon Press, Oxford, 1973).

As used herein, the term “leaving group” will be understood to mean anatom or group (which may be charged or uncharged) that becomes detachedfrom an atom in what is considered to be the residual or main part ofthe molecule taking part in a specified reaction (see also Pure Appl.Chem., 1994, 66, 1134).

As used herein, the term “conjugated” will be understood to mean acompound (for example a polymer) that contains mainly C atoms withsp²-hybridisation (or optionally also sp-hybridisation), and whereinthese C atoms may also be replaced by hetero atoms. In the simplest casethis is for example a compound with alternating C—C single and double(or triple) bonds, but is also inclusive of compounds with aromaticunits like for example 1,4-phenylene. The term “mainly” in thisconnection will be understood to mean that a compound with naturally(spontaneously) occurring defects, or with defects included by design,which may lead to interruption of the conjugation, is still regarded asa conjugated compound.

As used herein, unless stated otherwise the molecular weight is given asthe number average molecular weight M_(n) or weight average molecularweight Mw, which is determined by gel permeation chromatography (GPC)against polystyrene standards in eluent solvents such astetrahydrofuran, trichloromethane (TCM, chloroform), chlorobenzene or1,2,4-trichlorobenzene. Unless stated otherwise, 1,2,4-trichlorobenzeneis used as solvent. The degree of polymerization, also referred to astotal number of repeat units, n, will be understood to mean the numberaverage degree of polymerization given as n=M_(n)/M_(U), wherein M_(n)is the number average molecular weight and M_(U) is the molecular weightof the single repeat unit, see J. M. G. Cowie, Polymers: Chemistry &Physics of Modern Materials, Blackie, Glasgow, 1991.

As used herein, the term “carbyl group” will be understood to mean anymonovalent or multivalent organic moiety which comprises at least onecarbon atom either without any non-carbon atoms (like for example—C≡C—), or optionally combined with at least one non-carbon atom such asB, N, O, S, P, Si, Se, As, Te or Ge (for example carbonyl etc.).

As used herein, the term “hydrocarbyl group” will be understood to meana carbyl group that does additionally contain one or more H atoms andoptionally contains one or more hetero atoms like for example B, N, O,S, P, Si, Se, As, Te or Ge.

As used herein, the term “hetero atom” will be understood to mean anatom in an organic compound that is not a H- or C-atom, and preferablywill be understood to mean B, N, O, S, P, Si, Se, As, Te or Ge.

A carbyl or hydrocarbyl group comprising a chain of 3 or more C atomsmay be straight-chain, branched and/or cyclic, and may includespiro-connected and/or fused rings.

Preferred carbyl and hydrocarbyl groups include alkyl, alkoxy,alkylcarbonyl, alkoxycarbonyl, alkylcarbonyloxy and alkoxycarbonyloxy,each of which is optionally substituted and has 1 to 40, preferably 1 to25, very preferably 1 to 18 C atoms, furthermore optionally substitutedaryl or aryloxy having 6 to 40, preferably 6 to 25 C atoms, furthermorealkylaryloxy, arylcarbonyl, aryloxycarbonyl, arylcarbonyloxy andaryloxycarbonyloxy, each of which is optionally substituted and has 6 to40, preferably 7 to 40 C atoms, wherein all these groups do optionallycontain one or more hetero atoms, preferably selected from B, N, O, S,P, Si, Se, As, Te and Ge.

Further preferred carbyl and hydrocarbyl group include for example: aC₁-C₄₀ alkyl group, a C₁-C₄₀ fluoroalkyl group, a C1-C₄₀ alkoxy oroxaalkyl group, a C₂-C₄₀ alkenyl group, a C₂-C₄₀ alkynyl group, a C₃-C₄₀allyl group, a C₄-C₄₀ alkyldienyl group, a C₄-C₄₀ polyenyl group, aC₂-C₄₀ ketone group, a C₂-C₄₀ ester group, a C₆-C₁₈ aryl group, a C₆-C₄₀alkylaryl group, a C₆-C₄₀ arylalkyl group, a C₄-C₄₀ cycloalkyl group, aC₄-C₄₀ cycloalkenyl group, and the like. Preferred among the foregoinggroups are a C1-C₂₀ alkyl group, a C1-C₂₀ fluoroalkyl group, a C₂-C₂₀alkenyl group, a C₂-C₂₀ alkynyl group, a C₃-C₂₀ allyl group, a C₄-C₂₀alkyldienyl group, a C₂-C₂₀ ketone group, a C₂-C₂₀ ester group, a C₆-C₁₂aryl group, and a C₄-C₂₀ polyenyl group, respectively.

Also included are combinations of groups having carbon atoms and groupshaving hetero atoms, like e.g. an alkynyl group, preferably ethynyl,that is substituted with a silyl group, preferably a trialkylsilylgroup.

The carbyl or hydrocarbyl group may be an acyclic group or a cyclicgroup. Where the carbyl or hydrocarbyl group is an acyclic group, it maybe straight-chain or branched. Where the carbyl or hydrocarbyl group isa cyclic group, it may be a non-aromatic carbocyclic or heterocyclicgroup, or an aryl or heteroaryl group.

A non-aromatic carbocyclic group as referred to above and below issaturated or unsaturated and preferably has 4 to 30 ring C atoms. Anon-aromatic heterocyclic group as referred to above and belowpreferably has 4 to 30 ring C atoms, wherein one or more of the C ringatoms are optionally replaced by a hetero atom, preferably selected fromN, O, S, Si and Se, or by a —S(O)— or —S(O)₂— group. The non-aromaticcarbo- and heterocyclic groups are mono- or polycyclic, may also containfused rings, preferably contain 1, 2, 3 or 4 fused or unfused rings, andare optionally substituted with one or more groups L, wherein

L is selected from halogen, —CN, —NC, —NCO, —NCS, —OCN, —SCN,—C(═O)NR⁰R⁰⁰, —C(═O)X⁰, —C(═O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H,—SO₂R⁰, —OH, —NO₂, —CF₃, —SF₅, optionally substituted silyl, or carbylor hydrocarbyl with 1 to 40 C atoms that is optionally substituted andoptionally comprises one or more hetero atoms, and is preferably alkyl,alkoxy, thioalkyl, alkylcarbonyl, alkoxycarbonyl or alkoxycarbonyloxywith 1 to 20 C atoms that is optionally fluorinated,

X⁰ is halogen, preferably F, Cl or Br, and

R⁰, R⁰⁰ independently of each other denote H or an optionallysubstituted carbyl or hydrocarbyl group with 1 to 40 C atoms, andpreferably denote H or alkyl with 1 to 12 C atoms.

Preferred substituents L are selected from halogen, most preferably F,or alkyl, alkoxy, oxaalkyl, thioalkyl, fluoroalkyl and fluoroalkoxy with1 to 16 C atoms, or alkenyl or alkynyl with 2 to 16 C atoms.

Preferred non-aromatic carbocyclic or heterocyclic groups aretetrahydrofuran, indane, pyran, pyrrolidine, piperidine, cyclopentane,cyclohexane, cycloheptane, cyclopentanone, cyclohexanone,dihydro-furan-2-one, tetrahydro-pyran-2-one and oxepan-2-one.

An aryl group as referred to above and below preferably has 4 to 30 ringC atoms, is mono- or polycyclic and may also contain fused rings,preferably contains 1, 2, 3 or 4 fused or unfused rings, and isoptionally substituted with one or more groups L as defined above.

A heteroaryl group as referred to above and below preferably has 4 to 30ring C atoms, wherein one or more of the C ring atoms are replaced by ahetero atom, preferably selected from N, O, S, Si and Se, is mono- orpolycyclic and may also contain fused rings, preferably contains 1, 2, 3or 4 fused or unfused rings, and is optionally substituted with one ormore groups L as defined above.

As used herein, “arylene” will be understood to mean a divalent arylgroup, and “heteroarylene” will be understood to mean a divalentheteroaryl group, including all preferred meanings of aryl andheteroaryl as given above and below.

Preferred aryl and heteroaryl groups are phenyl in which, in addition,one or more CH groups may be replaced by N, naphthalene, thiophene,selenophene, thienothiophene, dithienothiophene, fluorene and oxazole,all of which can be unsubstituted, mono- or polysubstituted with L asdefined above. Very preferred rings are selected from pyrrole,preferably N-pyrrole, furan, pyridine, preferably 2- or 3-pyridine,pyrimidine, pyridazine, pyrazine, triazole, tetrazole, pyrazole,imidazole, isothiazole, thiazole, thiadiazole, isoxazole, oxazole,oxadiazole, thiophene, preferably 2-thiophene, selenophene, preferably2-selenophene, thieno[3,2-b]thiophene, thieno[2,3-b]thiophene,furo[3,2-b]furan, furo[2,3-b]furan, seleno[3,2-b]selenophene,seleno[2,3-b]selenophene, thieno[3,2-b]selenophene, thieno[3,2-b]furan,indole, isoindole, benzo[b]furan, benzo[b]thiophene,benzo[1,2-b;4,5-b′]dithiophene, benzo[2,1-b;3,4-b′]dithiophene, quinole,2-methylquinole, isoquinole, quinoxaline, quinazoline, benzotriazole,benzimidazole, benzothiazole, benzisothiazole, benzisoxazole,benzoxadiazole, benzoxazole, benzothiadiazole,4H-cyclopenta[2,1-b;3,4-b′]dithiophene,7H-3,4-dithia-7-sila-cyclopenta[a]pentalene, all of which can beunsubstituted, mono- or polysubstituted with L as defined above. Furtherexamples of aryl and heteroaryl groups are those selected from thegroups shown hereinafter.

An alkyl group or an alkoxy group, i.e., where the terminal CH₂ group isreplaced by —O—, can be straight-chain or branched. It is preferablystraight-chain, has 2, 3, 4, 5, 6, 7, 8, 10, 12, 14, 16 or 18 carbonatoms and accordingly is preferably ethyl, propyl, butyl, pentyl, hexyl,heptyl, octyl, decyl, dodecyl, tetradecyl, hexadecyl, octadecyl, ethoxy,propoxy, butoxy, pentoxy, hexoxy, heptoxy, octoxy, decoxy, dodecoxy,tetradecoxy, hexadecoxy, octadecoxy, furthermore methyl, nonyl, undecyl,tridecyl, pentadecyl, heptadecyl, nonadecyl, methoxy, nonoxy, undecoxy,tridecoxy, pentadecoxy or heptadecoxy, for example.

An alkenyl group, i.e., wherein one or more CH₂ groups are replaced by—CH═CH— can be straight-chain or branched. It is preferablystraight-chain, has 2 to 10 C atoms and accordingly is preferably vinyl,prop-1i -, or prop-2-enyl, but-1-, 2- or but-3-enyl, pent-1-, 2-, 3- orpent-4-enyl, hex-1-, 2-, 3-, 4- or hex-5-enyl, hept-1-, 2-, 3-, 4-, 5-or hept-6-enyl, oct-1-, 2-, 3-, 4-, 5-, 6- or oct-7-enyl, non-1-, 2-,3-, 4-, 5-, 6-, 7- or non-8-enyl, dec-1-, 2-, 3-, 4-, 5-, 6-, 7-, 8- ordec-9-enyl.

Especially preferred alkenyl groups are C₂-C₇-1E-alkenyl,C₄-C₇-3E-alkenyl, C₅-C₇-4-alkenyl, C₆-C₇-5-alkenyl and C₇-6-alkenyl, inparticular C₂-C₇-1E-alkenyl, C₄-C₇-3E-alkenyl and C₅-C₇-4-alkenyl.Examples for particularly preferred alkenyl groups are vinyl,1E-propenyl, 1E-butenyl, 1E-pentenyl, 1E-hexenyl, 1E-heptenyl,3-butenyl, 3E-pentenyl, 3E-hexenyl, 3E-heptenyl, 4-pentenyl, 4Z-hexenyl,4E-hexenyl, 4Z-heptenyl, 5-hexenyl, 6-heptenyl and the like. Groupshaving up to 5 C atoms are generally preferred.

An oxaalkyl group, i.e., where one CH₂ group is replaced by —O—, ispreferably straight-chain 2-oxapropyl (=methoxymethyl),2-(=ethoxymethyl) or 3-oxabutyl (=2-methoxyethyl), 2-, 3-, or4-oxapentyl, 2-, 3-, 4-, or 5-oxahexyl, 2-, 3-, 4-, 5-, or 6-oxaheptyl,2-, 3-, 4-, 5-, 6- or 7-oxaoctyl, 2-, 3-, 4-, 5-, 6-, 7- or 8-oxanonylor 2-, 3-, 4-, 5-, 6-,7-, 8- or 9-oxadecyl, for example.

In an alkyl group wherein one CH₂ group is replaced by —O— and one CH₂group is replaced by —C(O)—, these radicals are preferably neighboured.Accordingly these radicals together form a carbonyloxy group —C(O)—O— oran oxycarbonyl group —O—C(O)—. Preferably this group is straight-chainand has 2 to 6 C atoms. It is accordingly preferably acetyloxy,propionyloxy, butyryloxy, pentanoyloxy, hexanoyloxy, acetyloxymethyl,propionyloxymethyl, butyryloxymethyl, pentanoyloxymethyl,2-acetyloxyethyl, 2-propionyloxyethyl, 2-butyryloxyethyl,3-acetyloxypropyl, 3-propionyloxypropyl, 4-acetyloxybutyl,methoxycarbonyl, ethoxycarbonyl, propoxycarbonyl, butoxycarbonyl,pentoxycarbonyl, methoxycarbonylmethyl, ethoxycarbonylmethyl,propoxycarbonylmethyl, butoxycarbonylmethyl, 2-(methoxycarbonyl)ethyl,2-(ethoxycarbonyl)ethyl, 2-(propoxycarbonyl)ethyl,3-(methoxycarbonyl)propyl, 3-(ethoxycarbonyl)propyl,4-(methoxycarbonyl)-butyl.

An alkyl group wherein two or more CH₂ groups are replaced by —O— and/or—C(O)O— can be straight-chain or branched. It is preferablystraight-chain and has 3 to 20 C atoms. Accordingly it is preferablybis-carboxy-methyl, 2,2-bis-carboxy-ethyl, 3,3-bis-carboxy-propyl,4,4-bis-carboxy-butyl, 5,5-bis-carboxy-pentyl, 6,6-bis-carboxy-hexyl,7,7-bis-carboxy-heptyl, 8,8-bis-carboxy-octyl, 9,9-bis-carboxy-nonyl,10,10-bis-carboxy-decyl, bis-(methoxycarbonyl)-methyl,2,2-bis-(methoxycarbonyl)-ethyl, 3,3-bis-(methoxycarbonyl)-propyl,4,4-bis-(methoxycarbonyl)-butyl, 5,5-bis-(methoxycarbonyl)-pentyl,6,6-bis-(methoxycarbonyl)-hexyl, 7,7-bis-(methoxycarbonyl)-heptyl,8,8-bis-(methoxycarbonyl)-octyl, bis-(ethoxycarbonyl)-methyl,2,2-bis-(ethoxycarbonyl)-ethyl, 3,3-bis-(ethoxycarbonyl)-propyl,4,4-bis-(ethoxycarbonyl)-butyl, 5,5-bis-(ethoxycarbonyl)-hexyl.

A thioalkyl group, i.e., where one CH₂ group is replaced by —S—, ispreferably straight-chain thiomethyl (—SCH₃), 1-thioethyl (—SCH₂CH₃),1-thiopropyl (=—SCH₂CH₂CH₃), 1-(thiobutyl), 1-(thiopentyl),1-(thiohexyl), 1-(thioheptyl), 1-(thiooctyl), 1-(thiononyl),1-(thiodecyl), 1-(thioundecyl), 1-(thiododecyl), 1-(thiotetradecyl)1-(thiohexadecyl) or 1-(thiooctadecyl) wherein preferably the CH₂ groupadjacent to the sp² hybridised vinyl carbon atom is replaced.

A fluoroalkyl group is perfluoroalkyl C_(i)F_(2i+1), wherein i is aninteger from 1 to 15, in particular CF₃, C₂F₅, C₃F₇, C₄F₉, C₅F₁₁, C₆F₁₃,C₇F₁₅, C₈F₁₇, C₁₀F₂₁, C₁₂F₂₅, C₁₄F₂₉, C₁₆F₃₃ or C₁₈F₃₅, very preferablyC₆F₁₃, or partially fluorinated alkyl with 1 to 15 C atoms, inparticular 1,1-difluoroalkyl, all of which are straight-chain orbranched.

Alkyl, alkoxy, alkenyl, oxaalkyl, thioalkyl, carbonyl and carbonyloxygroups can be achiral or chiral groups. Particularly preferred chiralgroups are 2-butyl (=1-methylpropyl), 2-methylbutyl, 2-methylpentyl,3-methylpentyl, 2-ethylhexyl, 2-propylpentyl, 2-butyloctyl,2-hexyldecyl, 2-octyldodecyl, 7-decylnonadecyl, in particular2-methylbutyl, 2-methylbutoxy, 2-methylpentoxy, 3-methylpentoxy,2-ethyl-hexoxy, 2-butyloctoxyo, 2-hexyldecoxy, 2-octyldodecoxy,1-methylhexoxy, 2-octyloxy, 2-oxa-3-methylbutyl, 3-oxa-4-methyl-pentyl,4-methylhexyl, 2-hexyl, 2-octyl, 2-nonyl, 2-decyl, 2-dodecyl,6-meth-oxyoctoxy, 6-methyloctoxy, 6-methyloctanoyloxy,5-methylheptyloxy-carbonyl, 2-methylbutyryloxy, 3-methylvaleroyloxy,4-methylhexanoyloxy, 2-chloropropionyloxy, 2-chloro-3-methylbutyryloxy,2-chloro-4-methyl-valeryl-oxy, 2-chloro-3-methylvaleryloxy,2-methyl-3-oxapentyl, 2-methyl-3-oxa-hexyl, 1-methoxypropyl-2-oxy,1-ethoxypropyl-2-oxy, 1-propoxypropyl-2-oxy, 1-butoxypropyl-2-oxy,2-fluorooctyloxy, 2-fluorodecyloxy, 1,1,1-trifluoro-2-octyloxy,1,1,1-trifluoro-2-octyl, 2-fluoromethyloctyloxy for example. Verypreferred are 2-ethylhexyl, 2-butyloctyl, 2-hexyldecyl, 2-octyldodecyl,2-hexyl, 2-octyl, 2-octyloxy, 1,1,1-trifluoro-2-hexyl,1,1,1-trifluoro-2-octyl and 1,1,1-trifluoro-2-octyloxy.

Preferred achiral branched groups are isopropyl, isobutyl(=methylpropyl), isopentyl (=3-methylbutyl), tert. butyl, isopropoxy,2-methyl-propoxy and 3-methylbutoxy.

In a preferred embodiment, the alkyl groups are independently of eachother selected from primary, secondary or tertiary alkyl or alkoxy with1 to 30 C atoms, wherein one or more H atoms are optionally replaced byF, or aryl, aryloxy, heteroaryl or heteroaryloxy that is optionallyalkylated or alkoxylated and has 4 to 30 ring atoms. Very preferredgroups of this type are selected from the group consisting of thefollowing formulae

wherein “ALK” denotes optionally fluorinated, preferably linear, alkylor alkoxy with 1 to 20, preferably 1 to 12 C-atoms, in case of tertiarygroups very preferably 1 to 9 C atoms, and the dashed line denotes thelink to the ring to which these groups are attached. Especiallypreferred among these groups are those wherein all ALK subgroups areidentical.

As used herein, “halogen” or “hal” includes F, Cl, Br or I, preferablyF, Cl or Br.

As used herein, —CO—, —C(═O)— and —C(O)— will be understood to mean acarbonyl group, i.e. a group having the structure

Above and below, Y¹ and Y² are independently of each other H, F, Cl orCN.

Above and below, R⁰ and R⁰⁰ are independently of each other H or anoptionally substituted carbyl or hydrocarbyl group with 1 to 40 C atoms,and preferably denote H or alkyl with 1 to 12 C-atoms.

In the units of formula I, R preferably denotes straight-chain alkylwith 16, 18, 20, 22 or 24 C-atoms, very preferably straight-chain alkylwith 16 or 18 C-atoms. Preferably R in formula I is an unfluorinatedalkyl group.

Preferred polymers according to the present invention comprise one ormore repeating units of formula IIa or IIb:

—[(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]—  IIa

—[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]—  IIb

wherein

-   U is a unit of formula I,-   Ar¹, Ar², Ar³ are, on each occurrence identically or differently,    and independently of each other, aryl or heteroaryl that is    different from U, preferably has 5 to 30 ring atoms, and is    optionally substituted, preferably by one or more groups R^(S),-   R^(S) is on each occurrence identically or differently F, Br, Cl,    —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰,    —C(O)OR⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H, —SO₂R⁰, —OH, —NO₂, —CF₃,    —SF₅, optionally substituted silyl, carbyl or hydrocarbyl with 1 to    40 C atoms that is optionally substituted and optionally comprises    one or more hetero atoms,-   R⁰ and R⁰⁰ are independently of each other H or optionally    substituted C₁-40 carbyl or hydrocarbyl, and preferably denote H or    alkyl with 1 to 12 C-atoms,-   X⁰ is halogen, preferably F, Cl or Br,-   a, b, c are on each occurrence identically or differently 0, 1 or 2,-   d is on each occurrence identically or differently 0 or an integer    from 1 to 10,    wherein the polymer comprises at least one repeating unit of formula    IIa or IIb wherein b is at least 1.

Further preferred polymers according to the present invention comprise,in addition to the units of formula I, IIa or IIb, one or more repeatingunits selected from monocyclic or polycyclic aryl or heteroaryl groupsthat are optionally substituted.

These additional repeating units are preferably selected of formula IIIaand IIIb

—[(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(c)—(Ar³)_(d)]  IIIa

-[(A^(c))_(b)-(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(c)—(Ar³)_(d)]—  IIIb

wherein Ar¹, Ar², Ar³, a, b, c and d are as defined in formula IIa, andA^(c) is an aryl or heteroaryl group that is different from U and Ar¹⁻³,preferably has 5 to 30 ring atoms, is optionally substituted by one ormore groups R^(S) as defined above and below, and is preferably selectedfrom aryl or heteroaryl groups having electron acceptor properties,wherein the polymer comprises at least one repeating unit of formulaIIIa or IIIb wherein b is at least 1.

R^(S) preferably denotes, on each occurrence identically or differently,H, straight-chain, branched or cyclic alkyl with 1 to 30 C atoms, inwhich one or more CH₂ groups are optionally replaced by —O—, —S—,—C(O)—, —C(S)—, —C(O)—O—, —O—C(O)—, —NR⁰—, —SiR⁰R⁰⁰—, —CF₂—, —CHR═CR⁰⁰—,—CY¹═CY²— or —C≡C— in such a manner that O and/or S atoms are not linkeddirectly to one another, and in which one or more H atoms are optionallyreplaced by F, Cl, Br, I or CN, or denotes aryl, heteroaryl, aryloxy orheteroaryloxy with 4 to 20 ring atoms which is optionally substituted,preferably by halogen or by one or more of the aforementioned alkyl orcyclic alkyl groups, wherein

R⁰ and R⁰⁰ denote independently of each other H or optionallysubstituted C₁₋₄₀ carbyl or hydrocarbyl, and preferably denote H oralkyl with 1 to 12 C-atoms, X⁰ denotes halogen, preferably F, Cl or Br,and Y¹ and Y² denote H, F or CN.

The conjugated polymers according to the present invention arepreferably selected of formula IV:

wherein

-   A, B, C independently of each other denote a distinct unit of    formula I, Ia, IIa, IIb, IIIa, IIIb, or their preferred subformulae,-   x is >0 and ≦1,-   y is ≧0 and <1,-   z is ≧0 and <1,-   x+y+z is 1, and-   n is an integer >1.

Preferred polymers of formula IV are selected of the following formulae

*—[(Ar¹—U—Ar²)_(x)—(Ar³)_(y)]_(n)—*  IVa

*—[(Ar¹—U—Ar²)_(x)—(Ar³)_(y)]_(n)-*  IVa

*—[(Ar¹—U—Ar²)_(x)—(Ar³—Ar³)_(y)]_(n)-*  IVb

*—[(Ar¹—U—Ar²)_(x)—(Ar³—Ar³—Ar³)_(y)]_(n)-*  IVc

*—[(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]_(n)-*  IVd

*—([(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]_(x)—[(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(c)—(Ar³)_(d)]_(y))_(n)-*  IVe

*—[(U—Ar¹—U)_(x)—(Ar²—Ar³)_(y)]_(n)—  IVf

*—[(U—Ar¹—U)_(x)—(Ar²—Ar³—Ar²)_(y)]_(n)—  IVg

*—[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)]_(n)—*  IVh

*—[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)]_(x)—[(A^(c))_(b)-(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(d)]_(y))_(n)-*  IVi

*—[(U—Ar¹)_(x)—(U—Ar²)_(y)—(U—Ar³)_(z)]_(n)-*  IVk

wherein U, Ar¹, Ar², Ar³, a, b, c and d have in each occurrenceidentically or differently one of the meanings given in formula IIa,A^(c) has on each occurrence identically or differently one of themeanings given in formula IIIa, and x, y, z and n are as defined informula IV, wherein these polymers can be alternating or randomcopolymers, and wherein in formula IVd and IVe in at least one of therepeating units [(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)] and in at leastone of the repeating units [(Ar¹)_(a)—(A^(c))_(b)—(Ar²)_(c)—(Ar³)_(d)]bis at least 1 and wherein in formula IVh and IVi in at least one of therepeating units [(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)d] and in at least oneof the repeating units [(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(d)]b is atleast 1.

In the polymers of formula IV and its subformulae IVa to IVk, b ispreferably 1 in all repeating units.

In the polymers of formula IV and its subformulae IVa to IVk, x ispreferably from 0.1 to 0.9, very preferably from 0.3 to 0.7.

In a preferred embodiment of the present invention one of y and z is 0and the other is >0. In another preferred embodiment of the presentinvention, both y and z are 0. In yet another preferred embodiment ofthe present invention, both y and z are >0. If in the polymers offormula IV and its subformulae IVa to IVk y or z is >0, it is preferablyfrom 0.1 to 0.9, very preferably from 0.3 to 0.7.

In the polymers according to the present invention, the total number ofrepeating units n is preferably from 2 to 10,000. The total number ofrepeating units n is preferably ≧5, very preferably ≧10, most preferably≧50, and preferably ≦500, very preferably ≦1,000, most preferably≦2,000, including any combination of the aforementioned lower and upperlimits of n.

The polymers of the present invention include homopolymers andcopolymers, like statistical or random copolymers, alternatingcopolymers and block copolymers, as well as combinations thereof.

Especially preferred are polymers selected from the following groups:

-   -   Group A consisting of homopolymers of the unit U or (Ar¹—U) or        (Ar¹—U—Ar²) or (Ar¹—U—Ar³) or (U—Ar²—Ar³) or (Ar¹—U—Ar²—Ar³) or        (U—Ar¹—U), i.e. where all repeating units are identical,    -   Group B consisting of random or alternating copolymers formed by        identical units (Ar¹—U—Ar²) or (U—Ar¹—U) and identical units        (Ar³),    -   Group C consisting of random or alternating copolymers formed by        identical units (Ar¹—U—Ar²) or (U—Ar¹—U) and identical units        (A¹),    -   Group D consisting of random or alternating copolymers formed by        identical units (Ar¹—U—Ar²) or (U—Ar¹—U) and identical units        (Ar¹-A^(c)-Ar²) or (A^(c)-Ar¹-A^(c)),        wherein in all these groups U, A^(c), Ar¹, Ar² and Ar³ are as        defined above and below, in groups A, B and C Ar¹, Ar² and Ar³        are different from a single bond, and in group D one of Ar¹ and        Ar² may also denote a single bond.

Especially preferred are repeating units, monomers and polymers offormulae I, IIa, IIb, IIIa, IIIb, IV, IVa-IVk, V, VIa, VIb and theirsubformulae wherein one or more of Ar¹, Ar² and Ar³ denote aryl orheteroaryl, preferably having electron donor properties, selected fromthe group consisting of the following formulae

wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷ and R¹⁸ independently of eachother denote H or have one of the meanings of R^(S) as defined above andbelow.

Further preferred are repeating units, monomers and polymers of formulaeI, IIa, IIb, IIIa, IIIb, IV, IVa-IVk, V, VIa, VIb and their subformulaewherein A^(c) and/or Ar³ denotes aryl or heteroaryl, preferably havingelectron acceptor properties, selected from the group consisting of thefollowing formulae

wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵ and R¹⁶ independently of each otherdenote H or have one of the meanings of R^(S) as defined above andbelow.

Further preferred are polymers of the following formula:

wherein

-   R has the meaning of formula I or one of its preferred meanings as    given above and below,-   D^(a), D^(b), D^(c), D^(d), D^(e) and D^(f) are independently of    each other aryl or heteroaryl that is different from formula I,    preferably has 5 to 30 ring atoms, and is optionally substituted,    preferably by one or more groups R^(S) as defined in formula IIa,    and has electron donor properties,-   i is >0 and <1, and-   m, o, p, q, r and s are independently of each other 20 and <1,-   with at least one of m, o, p, q, r and s being >0.

The donor units D^(a), D^(b), D^(c), D^(d), D^(e) and D^(f) arepreferably selected from formulae D1 to D116 above.

Further preferably the donor units D^(a), D^(b), D^(c), D^(d), D^(e) andD^(f) are selected from the following formulae:

wherein X¹¹ and X¹² denote independently of each other O, S, Se orNR^(S), with R^(S) being as defined in formula IIa, and R¹¹ to R²¹independently of each other denote H or have one of the meanings ofR^(S) as given above and below.

Especially preferred units of formula DU1 to DU18 are those wherein X¹¹and X¹² denote S.

Further preferred are units of formulae DU1 to DU12, especially thosewherein X¹¹ and X¹² denote S.

Further preferred are polymers of formula IV1 wherein o, p, q, r and sare 0.

Further preferred are polymers of formula IV1 wherein m and o is >0.

Especially preferred are polymers of the following formulae:

wherein R, R¹¹, R¹², i and m have the meanings given in formula IV1, andpreferably R¹¹ and R¹² are H. Preferably m and i are from 0.1 to 0.9,very preferably from 0.3 to 0.7.

Preferred polymers are selected of formula V

R⁵-chain-R⁶  V

wherein “chain” denotes a polymer chain of formulae IV, IV1, IV1a, IV1b,or IVa to IVk, and R⁵ and R⁶ have independently of each other one of themeanings of R^(S) as defined above, or denote, independently of eachother, H, F, Br, Cl, I, —CH₂Cl, —CHO, —CR′═CR″₂, —SiR′R″R′″, —SiR′X′X″,—SiR′R″X′, —SnR′R″R′″, —BR′R″, —B(OR′)(OR″), —B(OH)₂, —O—SO₂—R′, —C≡CH,—C≡C—SiR′₃, —ZnX′ or an endcap group, X′ and X″ denote halogen, R′, R″and R′″ have independently of each other one of the meanings of R⁰ givenin formula I, and two of R′, R″ and R′″ may also form a ring togetherwith the hetero atom to which they are attached.

Preferred endcap groups R⁵ and R⁶ are H, C₁₋₂₀ alkyl, or optionallysubstituted C₆₋₁₂ aryl or C₂₋₁₀ heteroaryl, very preferably H or phenyl.

Formulae IV, IV1, IV1a, IV1b, IVa to IVk and V include block copolymers,random or statistical copolymers and alternating copolymers.

The invention further relates to monomers of formula VIa, VIb and VIc

R⁷—(Ar¹)_(a)—U—(Ar²)_(c)—R⁸  VIa

R⁷—U—(Ar¹)_(a)—U—R⁸  VIb

R⁷—U-(D^(a))_(a1)-(D^(b))_(b1)-(D^(c))_(c1)-(D^(d))_(d1)-(D^(e))^(e1)-(D^(f))_(f1)-R⁸  IVc

whereinU, Ar¹, Ar², a and b have the meanings of formula IIa, or one of thepreferred meanings as described above and below,D^(a), D^(b), D^(c), D^(d), D^(e) and D^(f) have the meanings of formulaIV1,a1, b1, c1, d1, e1 and f1 are independently of each other 0 or 1, withat least one of a1, b1, c1, d1, e1 and f1 being 1, andR⁷ and R⁸ are, preferably independently of each other, selected from thegroup consisting of Cl, Br, I, O-tosylate, O-triflate, O-mesylate,O-nonaflate, —SiMe₂F, —SiMeF₂, —O—SO₂Z¹, —B(OZ²)₂, —CZ³═C(Z³)₂, —C≡CH,—C≡CSi(Z¹)₃, —ZnX⁰ and —Sn(Z⁴)₃, wherein X⁰ is halogen, preferably Cl,Br or I, Z¹⁻⁴ are selected from the group consisting of alkyl and aryl,each being optionally substituted, and two groups Z² may also togetherform a cyclic group.

Especially preferred are monomers of the following formulae

R⁷—Ar¹—U—Ar²—R⁸  VI1

R⁷—U—R⁸  VI2

R⁷—Ar¹—U—R⁸  VI3

R⁷—U—Ar²—R⁸  VI4

R⁷—U—Ar¹—U—R⁸  VI5

R⁷—U-D^(a)-R⁸  VI6

wherein U, D^(a), Ar¹, Ar², R⁷ and R⁸ are as defined in formula VI.

Further preferred are repeating units, monomers and polymers of formulaeI-VI and their subformulae selected from the following list of preferredembodiments:

-   -   y is >0 and <1 and z is 0,    -   y is >0 and <1 and z is >0 and <1,    -   n is at least 5, preferably at least 10, very preferably at        least 50, and up to 2,000, preferably up to 500.    -   M_(w) is at least 5,000, preferably at least 8,000, very        preferably at least 10,000, and preferably up to 300,000, very        preferably up to 100,000,    -   R denotes straight-chain alkyl with 16, 18, 20, 22 or 24        C-atoms, preferably straight-chain alkyl with 16 or 18 C-atoms,    -   all groups R^(S) denote H,    -   at least one group R^(S) is different from H,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of primary alkyl with 1        to 30 C atoms, secondary alkyl with 3 to 30 C atoms, and        tertiary alkyl with 4 to 30 C atoms, wherein in all these groups        one or more H atoms are optionally replaced by F,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of aryl and heteroaryl,        each of which is optionally fluorinated, alkylated or        alkoxylated and has 4 to 30 ring atoms,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of aryl and heteroaryl,        each of which is optionally fluorinated, or alkylated and has 4        to 30 ring atoms,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of primary alkoxy or        sulfanylalkyl with 1 to 30 C atoms, secondary alkoxy or        sulfanylalkyl with 3 to 30 C atoms, and tertiary alkoxy or        sulfanylalkyl with 4 to 30 C atoms, wherein in all these groups        one or more H atoms are optionally replaced by F,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of aryloxy and        heteroaryloxy, each of which is optionally alkylated or        alkoxylated and has 4 to 30 ring atoms,    -   R^(S) is selected, on each occurrence identically or        differently, from the group consisting of alkylcarbonyl,        alkoxycarbonyl and alkylcarbonyloxy, all of which are        straight-chain or branched, are optionally fluorinated, and have        from 1 to 30 C atoms,    -   R^(S) denotes, on each occurrence identically or differently, F,        Cl, Br, I, CN, R⁹, —C(O)—R⁹, —C(O)—O—R⁹, or —O—C(O)—R⁹, —SO₂—R⁹,        —SO₃—R⁹, wherein R⁹ is straight-chain, branched or cyclic alkyl        with 1 to 30 C atoms, in which one or more non-adjacent C atoms        are optionally replaced by —O—, —S—, —C(O)—, —C(O)—O—, —O—C(O)—,        —O—C(O)—O—, —SO₂—, —SO₃—, —CR⁰═CR⁰⁰— or —C≡C— and in which one        or more H atoms are optionally replaced by F, Cl, Br, I or CN,        or R⁹ is aryl or heteroaryl having 4 to 30 ring atoms which is        unsubstituted or which is substituted by one or more halogen        atoms or by one or more groups R¹ as defined above,    -   R⁰ and R⁰⁰ are selected from H or C₁-C₁₀-alkyl,    -   R⁵ and R⁶ are independently of each other selected from H,        halogen, —CH₂Cl, —CHO, —CH═CH₂—SiR′R″R′″, —SnR′R″R′″—BR′R″,        —B(OR′)(OR″), —B(OH)₂, P—Sp, C₁-C₂₀-alkyl, C₁-C₂₀-alkoxy,        C₂-C₂₀-alkenyl, C₁-C₂₀-fluoroalkyl and optionally substituted        aryl or heteroaryl, preferably phenyl,    -   R⁷ and R⁸ are independently of each other selected from the        group consisting of Cl, Br, I, O-tosylate, O-triflate,        O-mesylate, O-nonaflate, —SiMe₂F, —SiMeF₂, —O—SO₂Z¹, —B(OZ²)₂,        —CZ³═C(Z⁴)2, —C≡CH, C≡CSi(Z¹)₃, —ZnX⁰ and —Sn(Z⁴)₃, wherein X⁰        is halogen, Z¹⁻⁴ are selected from the group consisting of alkyl        and aryl, each being optionally substituted, and two groups Z²        may also form a cyclic group.

The compounds of the present invention can be synthesized according toor in analogy to methods that are known to the skilled person and aredescribed in the literature. Other methods of preparation can be takenfrom the examples. For example, the polymers can be suitably prepared byaryl-aryl coupling reactions, such as Yamamoto coupling, Suzukicoupling, Stille coupling, Sonogashira coupling, Heck coupling orBuchwald coupling. Suzuki coupling, Stille coupling and Yamamotocoupling are especially preferred. The monomers which are polymerised toform the repeat units of the polymers can be prepared according tomethods which are known to the person skilled in the art.

Preferably the polymers are prepared from monomers of formula VIa or VIbor their preferred subformulae as described above and below.

Another aspect of the invention is a process for preparing a polymer bycoupling one or more identical or different monomeric units of formula Ior monomers of formula VIa or VIb with each other and/or with one ormore co-monomers in a polymerisation reaction, preferably in anaryl-aryl coupling reaction.

Suitable and preferred comonomers are selected from the followingformulae

R⁷—(Ar¹)_(a)-A^(c)-(Ar²)_(c)—R⁸  VIII

R⁷—Ar¹—R⁸  IX

R⁷—Ar³—R⁸  X

R⁷-D^(a)-R⁸  XI

wherein Ar¹, Ar², Ar³, a and c have one of the meanings of formula IIaor one of the preferred meanings given above and below, A^(c) has one ofthe meanings of formula IIIa or one of the preferred meanings givenabove and below, D^(a) has the meaning of formula IV1 or one of thepreferred meanings given above and below, and R⁷ and R⁸ have one ofmeanings of formula VI or one of the preferred meanings given above andbelow.

Very preferred is a process for preparing a polymer by coupling one ormore monomers selected from formula Via or VIb with one or more monomersof formula VIII, and optionally with one or more monomers selected fromformula IX, X and XI, in an aryl-aryl coupling reaction, whereinpreferably R⁷ and R⁸ are selected from Cl, Br, I, —B(OZ²)₂ and —Sn(Z⁴)₃.

For example, preferred embodiments of the present invention relate to

a) a process of preparing a polymer by coupling a monomer of formula VI1

R⁷—Ar¹—U—Ar²—R⁸  VI1

with a monomer of formula IX

R⁷—Ar¹—R⁸  IX

in an aryl-aryl coupling reaction,orb) a process of preparing a polymer by coupling a monomer of formula VI2

R⁷—U—R⁸  VI2

with a monomer of formula VIII1

R⁷—Ar¹-A^(c)-Ar²—R⁸  VIII1

in an aryl-aryl coupling reaction,orc) a process of preparing a polymer by coupling a monomer of formula VI2

R⁷—U—R⁸VI2

with a monomer of formula VIII-2

R⁷-A^(c)-R⁸  VIII2

in an aryl-aryl coupling reaction, ord) a process of preparing a polymer by coupling a monomer of formula VI2

R⁷—U—R⁸  VI2

with a monomer of formula VIII2

R⁷-A-R  VIII2

and a monomer of formula IX

R⁷—Ar¹—R⁸  IX

in an aryl-aryl coupling reaction,

-   -   e) a process of preparing a polymer by coupling a monomer of        formula VI1

R⁷—U—Ar¹—U—R⁸VI5

with a monomer of formula IX

R⁷—Ar¹—R⁸  IX

in an aryl-aryl coupling reaction,orf) a process of preparing a polymer by coupling a monomer of formula VI2

R⁷—U—R⁸  VI2

with a monomer of formula IX

R⁷—Ar¹—R⁸  IX

and a monomer of formula X

R⁷—Ar³—R⁸  X

in an aryl-aryl coupling reaction,org) a process of preparing a polymer by coupling a monomer of formula VI2

R⁷—U—R⁸  VI2

with a monomer of formula XI

R⁷-D^(a)-R⁸  XI

in an aryl-aryl coupling reaction,wherein R⁷, R⁸, U, D^(a), A^(c), Ar^(1,2,3) are as defined in formulaIIa, IIIa, VIa and VI1, and R⁷ and R⁸ are preferably selected from Cl,Br, I, —B(OZ²)₂ and —Sn(Z⁴)₃ as defined in formula VIa.

Preferred aryl-aryl coupling and polymerisation methods used in theprocesses described above and below are Yamamoto coupling, Kumadacoupling, Negishi coupling, Suzuki coupling, Stille coupling,Sonogashira coupling, Heck coupling, C—H activation coupling, Ullmanncoupling or Buchwald coupling. Especially preferred are Suzuki coupling,Negishi coupling, Stille coupling and Yamamoto coupling. Suzuki couplingis described for example in WO 00/53656 A1. Negishi coupling isdescribed for example in J. Chem. Soc., Chem. Commun., 1977, 683-684.Yamamoto coupling is described in for example in T. Yamamoto et al.,Prog. Polym. Sci., 1993, 17, 1153-1205, or WO 2004/022626 A1. Stillecoupling is described for example in Z. Bao et al., J. Am. Chem. Soc.,1995, 117, 12426-12435 and C—H activation is described for example in M.Leclerc et al, Angew. Chem. Int. Ed., 2012, 51, 2068-2071. For example,when using Yamamoto coupling, monomers having two reactive halide groupsare preferably used. When using Suzuki coupling, compounds of formula IIhaving two reactive boronic acid or boronic acid ester groups or tworeactive halide groups are preferably used. When using Stille coupling,monomers having two reactive stannane groups or two reactive halidegroups are preferably used. When using Negishi coupling, monomers havingtwo reactive organozinc groups or two reactive halide groups arepreferably used. When synthesizing a linear polymer by C—H activationpolymerisation, preferably a monomer as described above is used whereinat least one reactive group is an activated hydrogen bond.

Preferred catalysts, especially for Suzuki, Negishi or Stille coupling,are selected from Pd(0) complexes or Pd(II) salts. Preferred Pd(0)complexes are those bearing at least one phosphine ligand such asPd(Ph₃P)₄. Another preferred phosphine ligand istris(ortho-tolyl)phosphine, i.e. Pd(o-Tol₃P)₄. Preferred Pd(II) saltsinclude palladium acetate, i.e. Pd(OAc)₂. Alternatively the Pd(0)complex can be prepared by mixing a Pd(0) dibenzylideneacetone complex,for example tris(dibenzyl-ideneacetone)dipalladium(0),bis(dibenzylideneacetone)palladium(0), or Pd(II) salts e.g. palladiumacetate, with a phosphine ligand, for example triphenylphosphine,tris(ortho-tolyl)phosphine or tri(tert-butyl)phosphine. Suzukipolymerisation is performed in the presence of a base, for examplesodium carbonate, potassium carbonate, cesium carbonate, lithiumhydroxide, potassium phosphate or an organic base such astetraethylammonium carbonate or tetraethylammonium hydroxide. Yamamotopolymerisation employs a Ni(0) complex, for examplebis(1,5-cyclooctadienyl) nickel(0).

Suzuki, Stille or C—H activation coupling polymerisation may be used toprepare homopolymers as well as statistical, alternating and blockrandom copolymers. Statistical or block copolymers can be prepared forexample from the above monomers of formula VI or its subformulae,wherein one of the reactive groups is halogen and the other reactivegroup is a C—H activated bond, boronic acid, boronic acid derivativegroup or and alkylstannane. The synthesis of statistical, alternatingand block copolymers is described in detail for example in WO 03/048225A2 or WO 2005/014688 A2.

As alternatives to halogens as described above, leaving groups offormula —O—SO₂Z¹ can be used wherein Z¹ is as described above.Particular examples of such leaving groups are tosylate, mesylate andtriflate.

Especially suitable and preferred synthesis methods of the repeatingunits, monomers and polymers of formulae I-VI and their subformulae areillustrated in the synthesis schemes shown hereinafter, wherein R, a, b,c, d and n are as defined above, and Ar and Ar′ have one of the meaningsof Ar¹, Ar², Ar³ and A^(c) as given above.

Alternative methods of synthesis of the brominated monomer areexemplarily shown in Schemes 1 and 2

The synthesis of the boronated monomer is exemplarily shown in Scheme 3.

The synthesis of homopolymers by various methods is exemplarily shown inScheme 4.

The synthesis of alternating co-polymers is exemplarily shown in Scheme5.

The synthesis of statistical block co-polymers is exemplarily shown inScheme 6.

The novel methods of preparing monomers and polymers as described aboveand below are another aspect of the invention.

The compounds and polymers according to the present invention can alsobe used in mixtures or polymer blends, for example together withmonomeric compounds or together with other polymers havingcharge-transport, semiconducting, electrically conducting,photoconducting and/or light emitting semiconducting properties, or forexample with polymers having hole blocking or electron blockingproperties for use as interlayers or charge blocking layers in OLEDdevices. Thus, another aspect of the invention relates to a polymerblend comprising one or more polymers according to the present inventionand one or more further polymers having one or more of theabove-mentioned properties. These blends can be prepared by conventionalmethods that are described in prior art and known to the skilled person.Typically the polymers are mixed with each other or dissolved insuitable solvents and the solutions combined.

Another aspect of the invention relates to a formulation comprising oneor more small molecules, polymers, mixtures or polymer blends asdescribed above and below and one or more organic solvents.

Preferred solvents are aliphatic hydrocarbons, chlorinated hydrocarbons,aromatic hydrocarbons, ketones, ethers and mixtures thereof. Additionalsolvents which can be used include 1,2,4-trimethylbenzene,1,2,3,4-tetra-methyl benzene, pentylbenzene, mesitylene, cumene, cymene,cyclohexylbenzene, diethylbenzene, tetralin, decalin, 2,6-lutidine,2-fluoro-m-xylene, 3-fluoro-o-xylene, 2-chlorobenzotrifluoride,N,N-dimethylformamide, 2-chloro-6-fluorotoluene, 2-fluoroanisole,anisole, 2,3-dimethylpyrazine, 4-fluoroanisole, 3-fluoroanisole,3-trifluoro-methylanisole, 2-methylanisole, phenetol, 4-methylanisole,3-methylanisole, 4-fluoro-3-methylanisole, 2-fluorobenzonitrile,4-fluoroveratrol, 2,6-dimethylanisole, 3-fluorobenzo-nitrile,2,5-dimethylanisole, 2,4-dimethylanisole, benzonitrile,3,5-dimethylanisole, N,N-dimethylaniline, ethyl benzoate,1-fluoro-3,5-dimethoxy-benzene, 1-methylnaphthalene,N-methylpyrrolidinone, 3-fluorobenzotrifluoride, benzotrifluoride,dioxane, trifluoromethoxy-benzene, 4-fluorobenzotrifluoride,3-fluoropyridine, toluene, 2-fluoro-toluene, 2-fluorobenzotrifluoride,3-fluorotoluene, 4-isopropylbiphenyl, phenyl ether, pyridine,4-fluorotoluene, 2,5-difluorotoluene, 1-chloro-2,4-difluorobenzene,2-fluoropyridine, 3-chlorofluoro-benzene, 1-chloro-2,5-difluorobenzene,4-chlorofluorobenzene, chloro-benzene, o-dichlorobenzene,2-chlorofluorobenzene, p-xylene, m-xylene, o-xylene or mixture of o-,m-, and p-isomers. Solvents with relatively low polarity are generallypreferred. For inkjet printing solvents and solvent mixtures with highboiling temperatures are preferred. For spin coating alkylated benzeneslike xylene and toluene are preferred.

Examples of especially preferred solvents include, without limitation,dichloromethane, trichloromethane, chlorobenzene, o-dichlorobenzene,tetrahydrofuran, anisole, morpholine, toluene, o-xylene, m-xylene,p-xylene, 1,4-dioxane, acetone, methylethylketone, 1,2-dichloroethane,1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane, ethyl acetate, n-butylacetate, N,N-dimethylformamide, dimethylacetamide, dimethylsulfoxide,tetraline, decaline, indane, methyl benzoate, ethyl benzoate, mesityleneand/or mixtures thereof.

The concentration of the compounds or polymers in the solution ispreferably 0.1 to 10% by weight, more preferably 0.5 to 5% by weight.Optionally, the solution also comprises one or more binders to adjustthe rheological properties, as described for example in WO 2005/055248A1.

After the appropriate mixing and ageing, solutions are evaluated as oneof the following categories: complete solution, borderline solution orinsoluble. The contour line is drawn to outline the solubilityparameter-hydrogen bonding limits dividing solubility and insolubility.‘Complete’ solvents falling within the solubility area can be chosenfrom literature values such as published in “Crowley, J. D., Teague, G.S. Jr and Lowe, J. W. Jr., Journal of Paint Technology, 1966, 38 (496),296”. Solvent blends may also be used and can be identified as describedin “Solvents, W. H. Ellis, Federation of Societies for CoatingsTechnology, p9-10, 1986”. Such a procedure may lead to a blend of ‘non’solvents that will dissolve both the polymers of the present invention,although it is desirable to have at least one true solvent in a blend.

The compounds and polymers according to the present invention can alsobe used in patterned OSC layers in the devices as described above andbelow. For applications in modern microelectronics it is generallydesirable to generate small structures or patterns to reduce cost (moredevices/unit area), and power consumption. Patterning of thin layerscomprising a polymer according to the present invention can be carriedout for example by photolithography, electron beam lithography or laserpatterning.

For use as thin layers in electronic or electrooptical devices thecompounds, polymers, polymer blends or formulations of the presentinvention may be deposited by any suitable method. Liquid coating ofdevices is more desirable than vacuum deposition techniques. Solutiondeposition methods are especially preferred. The formulations of thepresent invention enable the use of a number of liquid coatingtechniques. Preferred deposition techniques include, without limitation,dip coating, spin coating, ink jet printing, nozzle printing,letter-press printing, screen printing, gravure printing, doctor bladecoating, roller printing, reverse-roller printing, offset lithographyprinting, dry offset lithography printing, flexographic printing, webprinting, spray coating, curtain coating, brush coating, slot dyecoating or pad printing.

Ink jet printing is particularly preferred when high resolution layersand devices needs to be prepared. Selected formulations of the presentinvention may be applied to prefabricated device substrates by ink jetprinting or microdispensing. Preferably industrial piezoelectric printheads such as but not limited to those supplied by Aprion, Hitachi-Koki,InkJet Technology, On Target Technology, Picojet, Spectra, Trident, Xaarmay be used to apply the organic semiconductor layer to a substrate.Additionally semi-industrial heads such as those manufactured byBrother, Epson, Konica, Seiko Instruments Toshiba TEC or single nozzlemicrodispensers such as those produced by Microdrop and Microfab may beused.

In order to be applied by ink jet printing or microdispensing, thecompounds or polymers should be first dissolved in a suitable solvent.Solvents must fulfil the requirements stated above and must not have anydetrimental effect on the chosen print head. Additionally, solventsshould have boiling points >100° C., preferably >140° C. and morepreferably >150 C in order to prevent operability problems caused by thesolution drying out inside the print head. Apart from the solventsmentioned above, suitable solvents include substituted andnon-substituted xylene derivatives, di-C₁₋₂-alkyl formamide, substitutedand non-substituted anisoles and other phenol-ether derivatives,substituted heterocycles such as substituted pyridines, pyrazines,pyrimidines, pyrrolidinones, substituted and non-substitutedN,N-di-C₁₋₂-alkylanilines and other fluorinated or chlorinatedaromatics.

A preferred solvent for depositing a compound or polymer according tothe present invention by ink jet printing comprises a benzene derivativewhich has a benzene ring substituted by one or more substituents whereinthe total number of carbon atoms among the one or more substituents isat least three. For example, the benzene derivative may be substitutedwith a propyl group or three methyl groups, in either case there beingat least three carbon atoms in total. Such a solvent enables an ink jetfluid to be formed comprising the solvent with the compound or polymer,which reduces or prevents clogging of the jets and separation of thecomponents during spraying. The solvent(s) may include those selectedfrom the following list of examples: dodecylbenzene,1-methyl-4-tert-butylbenzene, terpineol, limonene, isodurene,terpinolene, cymene, diethylbenzene. The solvent may be a solventmixture, that is a combination of two or more solvents, each solventpreferably having a boiling point >100 C, more preferably >140° C. Suchsolvent(s) also enhance film formation in the layer deposited and reducedefects in the layer.

The ink jet fluid (that is mixture of solvent, binder and semiconductingcompound) preferably has a viscosity at 20° C. of 1-100 mPa·s, morepreferably 1-50 mPa·s and most preferably 1-30 mPa·s.

The polymer blends and formulations according to the present inventioncan additionally comprise one or more further components or additivesselected for example from surface-active compounds, lubricating agents,wetting agents, dispersing agents, hydrophobing agents, adhesive agents,flow improvers, defoaming agents, deaerators, diluents which may bereactive or non-reactive, auxiliaries, colourants, dyes or pigments,sensitizers, stabilizers, nanoparticles or inhibitors.

The compounds and polymers to the present invention are useful as chargetransport, semiconducting, electrically conducting, photoconducting orlight emitting materials in optical, electrooptical, electronic,electroluminescent or photoluminescent components or devices. In thesedevices, the polymers of the present invention are typically applied asthin layers or films.

Thus, the present invention also provides the use of the semiconductingcompound, polymer, polymers blend, formulation or layer in an electronicdevice. The formulation may be used as a high mobility semiconductingmaterial in various devices and apparatus. The formulation may be used,for example, in the form of a semiconducting layer or film. Accordingly,in another aspect, the present invention provides a semiconducting layerfor use in an electronic device, the layer comprising a compound,polymer, polymer blend or formulation according to the invention. Thelayer or film may be less than about 30 microns. For various electronicdevice applications, the thickness may be less than about 1 micronthick. The layer may be deposited, for example on a part of anelectronic device, by any of the aforementioned solution coating orprinting techniques.

The invention additionally provides an electronic device comprising acompound, polymer, polymer blend, formulation or organic semiconductinglayer according to the present invention. Especially preferred devicesare OFETs, TFTs, ICs, logic circuits, capacitors, RFID tags, OLEDs,OLETs, OPEDs, OPVs, OPDs, solar cells, laser diodes, photoconductors,photodetectors, electrophotographic devices, electrophotographicrecording devices, organic memory devices, sensor devices, chargeinjection layers, Schottky diodes, planarising layers, antistatic films,conducting substrates and conducting patterns.

Especially preferred electronic device are OFETs, OLEDs, OPV and OPDdevices, in particular bulk heterojunction (BHJ) OPV devices. In anOFET, for example, the active semiconductor channel between the drainand source may comprise the layer of the invention. As another example,in an OLED device, the charge (hole or electron) injection or transportlayer may comprise the layer of the invention.

For use in OPV or OPD devices the polymer according to the presentinvention is preferably used in a formulation that comprises orcontains, more preferably consists essentially of, very preferablyexclusively of, a p-type (electron donor) semiconductor and an n-type(electron acceptor) semiconductor. The p-type semiconductor isconstituted by a polymer according to the present invention. The n-typesemiconductor can be an inorganic material such as zinc oxide (ZnO_(x)),zinc tin oxide (ZTO), titan oxide (TiO_(x)), molybdenum oxide (MoO_(x)),nickel oxide (NiO_(x)), or cadmium selenide (CdSe), or an organicmaterial such as graphene or a fullerene or substituted fullerene, forexample an indene-C₆₀-fullerene bisaduct like ICBA, or a(6,6)-phenyl-butyric acid methyl ester derivatized methano C₆₀fullerene, also known as “PCBM-C₆₀” or “C₆₀PCBM”, as disclosed forexample in G. Yu, J. Gao, J. C. Hummelen, F. Wudl, A. J. Heeger, Science1995, Vol. 270, p. 1789 ff and having the structure shown below, orstructural analogous compounds with e.g. a C₆₁ fullerene group, a C₇₀fullerene group, or a C₇₁ fullerene group, or an organic polymer (seefor example Coakley, K. M. and McGehee, M. D. Chem. Mater. 2004, 16,4533).

Preferably the polymer according to the present invention is blendedwith an n-type semiconductor such as a fullerene or substitutedfullerene, like for example PCBM-C₆₀, PCBM-C₇₀, PCBM-C₆₁, PCBM-C₇₁,bis-PCBM-C₆₁, bis-PCBM-C₇₁, ICBA(1′,1″,4′,4″-tetrahydro-di[1,4]methanonaphthaleno [1,2:2′,3′;56,60:2″,3″][5,6]fullerene-C60-Ih), graphene, or a metal oxide, like for example,ZnO_(x), TiO_(x), ZTO, MoO_(x), NiO_(x), to form the active layer in anOPV or OPD device. The device preferably further comprises a firsttransparent or semi-transparent electrode on a transparent orsemi-transparent substrate on one side of the active layer, and a secondmetallic or semi-transparent electrode on the other side of the activelayer.

Further preferably the OPV or OPD device comprises, between the activelayer and the first or second electrode, one or more additional bufferlayers acting as hole transporting layer and/or electron blocking layer,which comprise a material such as metal oxide, like for example, ZTO,MoO_(x), NiO_(x), a conjugated polymer electrolyte, like for examplePEDOT:PSS, a conjugated polymer, like for example polytriarylamine(PTAA), an organic compound, like for exampleN,N′-diphenyl-N,N′-bis(1-naphthyl)(1,1′-biphenyl)-4,4′diamine (NPB),N,N′-diphenyl-N,N′-(3-methylphenyl)-1,1′-biphenyl-4,4′-diamine (TPD), oralternatively as hole blocking layer and/or electron transporting layer,which comprise a material such as metal oxide, like for example,ZnO_(x), TiO_(x), a salt, like for example LiF, NaF, CsF, a conjugatedpolymer electrolyte, like for examplepoly[3-(6-trimethylammoniumhexyl)thiophene],poly(9,9-bis(2-ethylhexyl)-fluorene]-b-poly[3-(6-trimethylammoniumhexyl)thiophene],or poly[(9,9-bis(3′-(N,N-dimethylamino)propyl)-2,7-fluorene)-alt-2,7-(9,9-dioctylfluorene)]or an organic compound, like for exampletris(8-quinolinolato)-aluminium(III) (Alq₃),4,7-diphenyl-1,10-phenanthroline.

In a blend or mixture of a polymer according to the present inventionwith a fullerene or modified fullerene, the ratio polymer:fullerene ispreferably from 5:1 to 1:5 by weight, more preferably from 1:1 to 1:3 byweight, most preferably 1:1 to 1:2 by weight. A polymeric binder mayalso be included, from 5 to 95% by weight. Examples of binder includepolystyrene (PS), polypropylene (PP) and polymethylmethacrylate (PMMA).

To produce thin layers in BHJ OPV devices the compounds, polymers,polymer blends or formulations of the present invention may be depositedby any suitable method. Liquid coating of devices is more desirable thanvacuum deposition techniques. Solution deposition methods are especiallypreferred. The formulations of the present invention enable the use of anumber of liquid coating techniques. Preferred deposition techniquesinclude, without limitation, dip coating, spin coating, ink jetprinting, nozzle printing, letter-press printing, screen printing,gravure printing, doctor blade coating, roller printing, reverse-rollerprinting, offset lithography printing, dry offset lithography printing,flexographic printing, web printing, spray coating, curtain coating,brush coating, slot dye coating or pad printing.

For the fabrication of OPV devices and modules area printing methodcompatible with flexible substrates are preferred, for example slot dyecoating, spray coating and the like.

Suitable solutions or formulations containing the blend or mixture of apolymer according to the present invention with a C₆₀ or C₇₀ fullereneor modified fullerene like PCBM must be prepared. In the preparation offormulations, suitable solvent must be selected to ensure fulldissolution of both component, p-type and n-type and take into accountthe boundary conditions (for example rheological properties) introducedby the chosen printing method.

Organic solvent are generally used for this purpose. Typical solventscan be aromatic solvents, halogenated solvents or chlorinated solvents,including chlorinated aromatic solvents. Examples include, but are notlimited to chlorobenzene, 1,2-dichlorobenzene, chloroform,1,2-dichloroethane, dichloromethane, carbon tetrachloride, toluene,cyclohexanone, ethylacetate, tetrahydrofuran, anisole, morpholine,o-xylene, m-xylene, p-xylene, 1,4-dioxane, acetone, methylethylketone,1,2-dichloroethane, 1,1,1-trichloroethane, 1,1,2,2-tetrachloroethane,ethyl acetate, n-butyl acetate, dimethylformamide, dimethylacetamide,dimethylsulfoxide, tetraline, decaline, indane, methyl benzoate, ethylbenzoate, mesitylene and combinations thereof.

The OPV device can for example be of any type known from the literature(see e.g. Waldauf et al., Appl. Phys. Lett., 2006, 89, 233517).

A first preferred OPV device according to the invention comprises thefollowing layers (in the sequence from bottom to top):

-   -   optionally a substrate,    -   a high work function electrode, preferably comprising a metal        oxide, like for example ITO, serving as anode,    -   an optional conducting polymer layer or hole transport layer,        preferably comprising an organic poymer or polymer blend, for        example of PEDOT:PSS (poly(3,4-ethylenedioxythiophene):        poly(styrene-sulfonate), or TBD        (N,N′-dyphenyl-N—N′-bis(3-methylphenyl)-1,1′biphenyl-4,4′-diamine)        or NBD        (N,N′-dyphenyl-N—N′-bis(1-napthylphenyl)-1,1′biphenyl-4,4′-diamine),    -   a layer, also referred to as “active layer”, comprising a p-type        and an n-type organic semiconductor, which can exist for example        as a p-type/n-type bilayer or as distinct p-type and n-type        layers, or as blend or p-type and n-type semiconductor, forming        a BHJ,    -   optionally a layer having electron transport properties, for        example comprising LiF,    -   a low work function electrode, preferably comprising a metal        like for example aluminum, serving as cathode,        -   wherein at least one of the electrodes, preferably the            anode, is transparent to visible light, and        -   wherein the p-type semiconductor is a polymer according to            the present invention.

A second preferred OPV device according to the invention is an invertedOPV device and comprises the following layers (in the sequence frombottom to top):

-   -   optionally a substrate,    -   a high work function metal or metal oxide electrode, comprising        for example ITO, serving as cathode,    -   a layer having hole blocking properties, preferably comprising a        metal oxide like TiO_(x) or Zn_(x),    -   an active layer comprising a p-type and an n-type organic        semiconductor, situated between the electrodes, which can exist        for example as a p-type/n-type bilayer or as distinct p-type and        n-type layers, or as blend or p-type and n-type semiconductor,        forming a BHJ,    -   an optional conducting polymer layer or hole transport layer,        preferably comprising an organic poymer or polymer blend, for        example of PEDOT:PSS or TBD or NBD,    -   an electrode comprising a high work function metal like for        example silver, serving as anode,        -   wherein at least one of the electrodes, preferably the            cathode, is transparent to visible light, and        -   wherein the p-type semiconductor is a polymer according to            the present invention.

In the OPV devices of the present invention the p-type and n-typesemiconductor materials are preferably selected from the materials, likethe polymer/fullerene systems, as described above When the active layeris deposited on the substrate, it forms a BHJ that phase separates atnanoscale level. For discussion on nanoscale phase separation seeDennler et al, Proceedings of the IEEE, 2005, 93 (8), 1429 or Hoppe etal, Adv. Func. Mater, 2004, 14(10), 1005. An optional annealing step maybe then necessary to optimize blend morpohology and consequently OPVdevice performance.

Another method to optimize device performance is to prepare formulationsfor the fabrication of OPV(BHJ) devices that may include high boilingpoint additives to promote phase separation in the right way.1,8-Octanedithiol, 1,8-diiodooctane, nitrobenzene, chloronaphthalene,and other additives have been used to obtain high-efficiency solarcells. Examples are disclosed in J. Peet, et al, Nat. Mater, 2007, 6,497 or Fréchet et al. J. Am. Chem. Soc., 2010, 132, 7595-7597.

The compounds, polymers, formulations and layers of the presentinvention are also suitable for use in an OFET as the semiconductingchannel. Accordingly, the invention also provides an OFET comprising agate electrode, an insulating (or gate insulator) layer, a sourceelectrode, a drain electrode and an organic semiconducting channelconnecting the source and drain electrodes, wherein the organicsemiconducting channel comprises a compound, polymer, polymer blend,formulation or organic semiconducting layer according to the presentinvention. Other features of the OFET are well known to those skilled inthe art. OFETs where an OSC material is arranged as a thin film betweena gate dielectric and a drain and a source electrode, are generallyknown, and are described for example in U.S. Pat. No. 5,892,244, U.S.Pat. No. 5,998,804, U.S. Pat. No. 6,723,394 and in the references citedin the background section. Due to the advantages, like low costproduction using the solubility properties of the compounds according tothe invention and thus the processibility of large surfaces, preferredapplications of these FETs are such as integrated circuitry, TFTdisplays and security applications.

The gate, source and drain electrodes and the insulating andsemiconducting layer in the OFET device may be arranged in any sequence,provided that the source and drain electrode are separated from the gateelectrode by the insulating layer, the gate electrode and thesemiconductor layer both contact the insulating layer, and the sourceelectrode and the drain electrode both contact the semiconducting layer.

An OFET device according to the present invention preferably comprises:

-   -   a source electrode,    -   a drain electrode,    -   a gate electrode,    -   a semiconducting layer,    -   one or more gate insulator layers,    -   optionally a substrate.        wherein the semiconductor layer preferably comprises a compound,        polymer, polymer blend or formulation as described above and        below.

The OFET device can be a top gate device or a bottom gate device.Suitable structures and manufacturing methods of an OFET device areknown to the skilled in the art and are described in the literature, forexample in US 2007/0102696 A1.

The gate insulator layer preferably comprises a fluoropolymer, like e.g.the commercially available Cytop 809M® or Cytop 107M® (from AsahiGlass). Preferably the gate insulator layer is deposited, e.g. byspin-coating, doctor blading, wire bar coating, spray or dip coating orother known methods, from a formulation comprising an insulator materialand one or more solvents with one or more fluoro atoms (fluorosolvents),preferably a perfluorosolvent. A suitable perfluorosolvent is e.g. FC75®(available from Acros, catalogue number 12380). Other suitablefluoropolymers and fluorosolvents are known in prior art, like forexample the perfluoropolymers Teflon AF® 1600 or 2400 (from DuPont) orFluoropel® (from Cytonix) or the perfluorosolvent FC 43® (Acros, No.12377). Especially preferred are organic dielectric materials having alow permittivity (or dielectric contant) from 1.0 to 5.0, verypreferably from 1.8 to 4.0 (“low k materials”), as disclosed for examplein US 2007/0102696 A1 or U.S. Pat. No. 7,095,044.

In security applications, OFETs and other devices with semiconductingmaterials according to the present invention, like transistors ordiodes, can be used for RFID tags or security markings to authenticateand prevent counterfeiting of documents of value like banknotes, creditcards or ID cards, national ID documents, licenses or any product withmonetry value, like stamps, tickets, shares, cheques etc.

Alternatively, the materials according to the invention can be used inOLEDs, e.g. as the active display material in a flat panel displayapplications, or as backlight of a flat panel display like e.g. a liquidcrystal display. Common OLEDs are realized using multilayer structures.An emission layer is generally sandwiched between one or moreelectron-transport and/or hole-transport layers. By applying an electricvoltage electrons and holes as charge carriers move towards the emissionlayer where their recombination leads to the excitation and henceluminescence of the lumophor units contained in the emission layer. Theinventive compounds, materials and films may be employed in one or moreof the charge transport layers and/or in the emission layer,corresponding to their electrical and/or optical properties. Furthermoretheir use within the emission layer is especially advantageous, if thecompounds, materials and films according to the invention showelectroluminescent properties themselves or comprise electroluminescentgroups or compounds. The selection, characterization as well as theprocessing of suitable monomeric, oligomeric and polymeric compounds ormaterials for the use in OLEDs is generally known by a person skilled inthe art, see, e.g., Müller et al, Synth. Metals, 2000, 111-112, 31-34,Alcala, J. Appl. Phys., 2000, 88, 7124-7128 and the literature citedtherein.

According to another use, the materials according to this invention,especially those showing photoluminescent properties, may be employed asmaterials of light sources, e.g. in display devices, as described in EP0 889 350 A1 or by C. Weder et al., Science, 1998, 279, 835-837.

A further aspect of the invention relates to both the oxidised andreduced form of the compounds according to this invention. Either lossor gain of electrons results in formation of a highly delocalised ionicform, which is of high conductivity. This can occur on exposure tocommon dopants. Suitable dopants and methods of doping are known tothose skilled in the art, e.g. from EP 0 528 662, U.S. Pat. No.5,198,153 or WO 96/21659.

The doping process typically implies treatment of the semiconductormaterial with an oxidating or reducing agent in a redox reaction to formdelocalised ionic centres in the material, with the correspondingcounterions derived from the applied dopants. Suitable doping methodscomprise for example exposure to a doping vapor in the atmosphericpressure or at a reduced pressure, electrochemical doping in a solutioncontaining a dopant, bringing a dopant into contact with thesemiconductor material to be thermally diffused, and ion-implantantionof the dopant into the semiconductor material.

When electrons are used as carriers, suitable dopants are for examplehalogens (e.g., I₂, Cl₂, Br₂, ICl, ICl₃, IBr and IF), Lewis acids (e.g.,PF₅, AsF₅, SbF₅, BF₃, BCl₃, SbCl₅, BBr₃ and SO₃), protonic acids,organic acids, or amino acids (e.g., HF, HCl, HNO₃, H₂SO₄, HClO₄, FSO₃Hand ClSO₃H), transition metal compounds (e.g., FeCl₃, FeOCl, Fe(ClO₄)₃,Fe(4-CH₃C6H₄SO₃)3, TiCl₄, ZrCl₄, HfCl₄, NbF₅, NbCl₅, TaCl₅, MoF₅, MoCl₅,WF₅, WCl₆, UF₆ and LnCl₃ (wherein Ln is a lanthanoid), anions (e.g.,Cl⁻, Br⁻, I⁻, I₃ ⁻, HSO₄ ⁻, SO₄ ²⁻, NO₃ ⁻, ClO₄ ⁻, BF₄ ⁻, PF₆ ⁻, AsF₆ ⁻,SbF₆ ⁻, FeCl₄ ⁻, Fe(CN)₆ ³⁻, and anions of various sulfonic acids, suchas aryl-SO₃ ⁻). When holes are used as carriers, examples of dopants arecations (e.g., H⁺, Li⁺, Na⁺, K⁺, Rb⁺ and Cs⁺), alkali metals (e.g., Li,Na, K, Rb, and Cs), alkaline-earth metals (e.g., Ca, Sr, and Ba), O₂,XeOF₄, (NO₂ ⁺) (SbF₆ ⁻), (NO₂ ⁺) (SbCl₆ ⁻), (NO₂ ⁺) (BF₄ ⁻), AgClO₄,H₂IrCl₆, La(NO₃)₃.6H₂O, FSO₂OOSO₂F, Eu, acetylcholine, R₄N⁺, (R is analkyl group), R₄P⁺ (R is an alkyl group), R₆As⁺ (R is an alkyl group),and R₃S⁺ (R is an alkyl group).

The conducting form of the compounds of the present invention can beused as an organic “metal” in applications including, but not limitedto, charge injection layers and ITO planarising layers in OLEDapplications, films for flat panel displays and touch screens,antistatic films, printed conductive substrates, patterns or tracts inelectronic applications such as printed circuit boards and condensers.

The compounds and formulations according to the present invention mayalso be suitable for use in organic plasmon-emitting diodes (OPEDs), asdescribed for example in Koller et al., Nat. Photonics, 2008, 2, 684.

According to another use, the materials according to the presentinvention can be used alone or together with other materials in or asalignment layers in LCD or OLED devices, as described for example in US2003/0021913. The use of charge transport compounds according to thepresent invention can increase the electrical conductivity of thealignment layer. When used in an LCD, this increased electricalconductivity can reduce adverse residual dc effects in the switchableLCD cell and suppress image sticking or, for example in ferroelectricLCDs, reduce the residual charge produced by the switching of thespontaneous polarisation charge of the ferroelectric LCs. When used inan OLED device comprising a light emitting material provided onto thealignment layer, this increased electrical conductivity can enhance theelectroluminescence of the light emitting material. The compounds ormaterials according to the present invention having mesogenic or liquidcrystalline properties can form oriented anisotropic films as describedabove, which are especially useful as alignment layers to induce orenhance alignment in a liquid crystal medium provided onto saidanisotropic film. The materials according to the present invention mayalso be combined with photoisomerisable compounds and/or chromophoresfor use in or as photoalignment layers, as described in US 2003/0021913A1.

According to another use the materials according to the presentinvention, especially their water-soluble derivatives (for example withpolar or ionic side groups) or ionically doped forms, can be employed aschemical sensors or materials for detecting and discriminating DNAsequences. Such uses are described for example in L. Chen, D. W.McBranch, H. Wang, R. Helgeson, F. Wudl and D. G. Whitten, Proc. Natl.Acad. Sci. U.S.A., 1999, 96, 12287; D. Wang, X. Gong, P. S. Heeger, F.Rininsland, G. C. Bazan and A. J. Heeger, Proc. Natl. Acad. Sci. U.S.A.,2002, 99, 49; N. DiCesare, M. R. Pinot, K. S. Schanze and J. R.Lakowicz, Langmuir, 2002, 18, 7785; D. T. McQuade, A. E. Pullen, T. M.Swager, Chem. Rev., 2000, 100, 2537.

Unless the context clearly indicates otherwise, as used herein pluralforms of the terms herein are to be construed as including the singularform and vice versa.

Throughout the description and claims of this specification, the words“comprise” and “contain” and variations of the words, for example“comprising” and “comprises”, mean “including but not limited to”, andare not intended to (and do not) exclude other components.

It will be appreciated that variations to the foregoing embodiments ofthe invention can be made while still falling within the scope of theinvention.

Each feature disclosed in this specification, unless stated otherwise,may be replaced by alternative features serving the same, equivalent orsimilar purpose. Thus, unless stated otherwise, each feature disclosedis one example only of a generic series of equivalent or similarfeatures.

All of the features disclosed in this specification may be combined inany combination, except combinations where at least some of suchfeatures and/or steps are mutually exclusive. In particular, thepreferred features of the invention are applicable to all aspects of theinvention and may be used in any combination. Likewise, featuresdescribed in non-essential combinations may be used separately (not incombination).

Above and below, unless stated otherwise percentages are percent byweight and temperatures are given in degrees Celsius. The values of thedielectric constant E (“permittivity”) refer to values taken at 20° C.and 1,000 Hz.

The invention will now be described in more detail by reference to thefollowing examples, which are illustrative only and do not limit thescope of the invention.

Example 1 5,5′-Dibromo-1, 1′-dimethyl ester2,2′-thieno[3,2-b]thiophene-2,5-diylbis-benzoic acid

A mixture of 5-bromo-2-iodo-benzoic acid methyl ester (97.5 g, 286mmol), 2,5-bis-tributylstannanyl-thieno[3,2-b]thiophene (79.0 g, 110mmol), tri-o-tolyl-phosphine (804 mg, 2.6 mmol) and anhydrous toluene(1000 cm³) is degassed by nitrogen for 25 minutes. To the mixture isadded bis(triphenylphosphine) palladium(II)chloride (990 mg, 1.4 mmol)and the mixture further degassed for 15 minutes. The mixture is stirredat 23° C. for 96 hours to form a heavy suspension. The solid is isolatedfrom the reaction mixture by filtration. The filtration cake is washedwith isopropyl alcohol (200 cm³), acetonitrile (100 cm³) and diethylether (100 cm³). The product is collected and dried under vacuum to give5,5′-dibromo-1,1′-dimethyl ester2,2′-thieno[3,2-b]thiophene-2,5-diylbis-benzoic acid (39.5 g, 63%) as acream solid. ¹H-NMR (300 MHz, CDCl₃) 3.82 (6H, s), 7.23 (2H, s), 7.42(2H, d, J8.3), 7.67 (2H, dd, J8.3, 2.2), 7.85-7.99 (2H, m).[2-(5-{2-[Bis-(4-hexadecy-phenyl)-hydroxymethyl]-4-bromo-phenyl}thieno[3,2-b]thiophen-2-yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol

To a suspension of 1-bromo-4-hexadecylbenzene (7.2 g, 19 mmol) inanhydrous tetrahydrofuran (300 cm³) at −40 Q is added dropwisetert-butyllithium (22.4 cm³, 38.0 mmol, 1.7 M in pentane) over 45minutes. After addition, the reaction mixture is stirred at −78° C. for20 minutes before it is warmed to −20° C. and stirred for 40 minutes.The mixture is cooled to −78° C. and 5,5′-dibromo-1,1′-dimethyl ester2,2′-thieno[3,2-b]thiophene-2,5-diylbis-benzoic acid (2.2 g, 3.8 mmol)is added in one go. The mixture is then allowed to warm to 23° C. over17 hours. Diethyl ether (200 cm³) and water (200 cm³) is added and themixture stirred at 23° C. for 30 minutes. The product is extracted withdiethyl ether (3×100 cm³). The combined organics are dried overanhydrous magnesium sulfate, filtered and the solvent removed in vacuo.The crude product is triturated with acetone to form a suspension. Theproduct is filtered, collected and dried under vacuum to give[2-(5-{2-[bis-(4-hexadecyl-phenyl)-hydroxy-methyl]-4-bromo-phenyl}-thieno[3,2-b]thiophen-2-yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol(4.9 g, 76%) as a light brown solid. ¹H-NMR (300 MHz, CDCl₃) 0.86-0.99(12H, m), 1.19-1.41 (104H, m), 1.57-1.73 (8H, m), 2.58-2.71 (8H, m),3.29 (2H, s), 6.05 (2H, s), 7.02-7.16 (18H, m), 7.20 (2H, d, J8.2),7.41-7.50 (2H, m).

2,9-Dibromo-6,12-dihydro-6,6,12,12-tetrakis[4(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene

To a solution of[2-(5-{2-[bis-(4-hexadecyl-phenyl)-hydroxy-methyl]-4-bromo-phenyl}-thieno[3,2-b]thiophen-2-yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol(4.8 g, 2.8 mmol) in dichloromethane (150 cm³) is addedp-toluenesulfonic acid (1.0 g, 5.6 mmol). The resulting suspension isstirred at 40° C. for 5 hours. The reaction mixture is allowed to coolto 23° C. and the solvent removed in vacuo. The crude is dissolved in40-60 petrol (200 cm³) and filtered through a silica plug. The filtrateis cooled to 23° C. to form a heavy cream suspension. The solid iscollected by filtration and recrystallized from methyl ethyl ketone togive2,9-dibromo-6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiopheneas a cream solid (2.6 g, 55%). ¹H-NMR (300 MHz, CDCl₃) 0.83-0.97 (12H,m), 1.17-1.42 (104H, m), 1.54-1.66 (8H, m), 2.57 (8H, m), 7.12 (16H, d,J3.20), 7.22 (2H, d, J8.1), 7.41 (2H, dd, J8.1, 1.7), 7.53 (2H, d,J1.7).

Poly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[2,5-thieno[3,2-b]thiophene]}(Polymer1)

Nitrogen gas is bubbled through a mixture ofbenzo[1,2-b:4,5-b′]-di-(2-bromo[4,4-bis-(4-hexadecylphenyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophen-2-yl])(300.0 mg, 0.179 mmol),2,5-bis-trimethylstannanyl-thieno[3,2-b]thiophene (83.4 mg, 0.179 mmol),tri-o-tolyl-phosphine (18.0 mg, 0.059 mmol) in anhydrous toluene (5.7cm³) for 30 minutes.

Tris(dibenzylideneacetone)dipalladium(0) (11.3 mg, 0.016 mmol) is addedand the reaction mixture is then heated in a pre-heated oil bath at 100°C. for 120 minutes. Bromobenzene (0.004 cm³) is added and the mixtureheated at 100° C. for 30 minutes before addition oftributyl-phenyl-stannane (0.02 cm³). The mixture heated at 100° C. for 1hour. The mixture allowed to cool slightly and poured into stirredmethanol (300 cm³) and the polymer precipitate collected by filtration.The crude polymer is subjected to sequential Soxhlet extraction;acetone, 40-60 petrol, 80-100 petrol, cyclohexanes and chloroform. Thechloroform extract is poured into methanol (400 cm³) and the polymerprecipitate collected by filtration to givepoly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[2,5-thieno[3,2-b]thiophene]}(239mg, 74%) as a light brown solid. GPC (chlorobenzene, 50° C.)M_(n)=97,000 g/mol, M_(w)=238,000 g/mol.

Example 2Poly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[5,5′-[2,2′]bithiophene]}(Polymer2)

Nitrogen gas is bubbled through a mixture ofbenzo[1,2-b:4,5-b′]-di-(2-bromo[4,4-bis-(4-hexadecylphenyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophen-2-yl])(171 mg, 0.100 mmol), 5,5′-bis-trimethylstannanyl-[2,2′]bithiophene(50.0 mg, 0.100 mmol), tri-o-tolyl-phosphine (1.9 mg, 0.006 mmol) inanhydrous toluene (3 cm³) for 30 minutes.

Tris(dibenzylideneacetone)dipalladium(0) (1.1 mg, 0.002 mmol) is addedand the reaction mixture is then heated in a pre-heated oil bath at 100°C. for 30 minutes. Bromobenzene (0.02 cm³) is added and the mixtureheated at 100° C. for 30 minutes before addition oftributyl-phenyl-stannane (0.08 cm³). The mixture heated at 100° C. for 1hour. The mixture allowed to cool slightly and poured into stirredmethanol (200 cm³) and the polymer precipitate collected by filtration.The crude polymer is subjected to sequential Soxhlet extraction;acetone, 40-60 petrol, cyclohexanes and chloroform. The chloroformextract is poured into methanol (400 cm³) and the polymer precipitatecollected by filtration to givepoly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[5,5′-[2,2′]bithiophene]}(196mg, 84%) as a light brown solid. GPC (chlorobenzene, 50° C.)M_(n)=90,000 g/mol, M_(w)=208,000 g/mol.

Example 3Poly{2,9-[6,12-dihydro-6,6,12,12tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiphoene]-alt-[2,5-(4,7-bis(thiophen-2-yl)benzo[1,2,5]thiadiazole)]}(Polymer 3)

Nitrogen gas is bubbled through a mixture ofbenzo[1,2-b:4,5-b′]-di-(2-bromo[4,4-bis-(4-hexadecylphenyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophen-2-yl])(134.0 mg, 0.080 mmol), 4,7-bis(5-trimethylstannanyl-thiophen2-yl)benzo[1,2,5]thiadiazole (50.0 mg, 0.080 mmol), tri-o-tolyl-phosphine(1.5 mg, 0.005 mmol) in anhydrous toluene (2.5 cm³) for 35 minutes.Tris(dibenzylideneacetone)dipalladium(0) (0.9 mg, 0.001 mmol) is addedand the reaction mixture is then heated in a pre-heated oil bath at 100°C. for 190 minutes. Bromobenzene (0.017 cm³) is added and the mixtureheated at 100° C. for 15 minutes before addition oftributyl-phenyl-stannane (0.08 cm³). The mixture heated at 100° C. for15 minutes. The mixture allowed to cool slightly and poured into stirredacetone (200 cm³) and the polymer precipitate collected by filtration.The crude polymer is subjected to sequential Soxhlet extraction;methanol, 40-60 petrol, 80-100 petrol, cyclohexanes and chloroform. Thechloroform extract is poured into methanol (300 cm³) and the polymerprecipitate collected by filtration to givepoly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(hexadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[2,5-(4,7-bis(thiophen-2-yl)benzo[1,2,5]thiadiazole)]}(134mg, 85%) as a purple solid. GPC (chlorobenzene, 50° C.) M_(n)=38,000g/mol, M_(w)=82,000 g/mol.

Example 4

[2-(5-{2-[Bis-(4-octadecyl-phenyl)hydroxy-methyl]-4-bromo-phenyl}-thieno[3,2-b]thiophen-2yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol

To a suspension of 1-bromo-4-octadecylbenzene (7.8 g, 19.0 mmol) inanhydrous tetrahydrofuran (300 cm³) at −40° C. is added dropwisetert-butyllithium (22.4 cm³, 38.0 mmol, 1.7 M in pentane) over 45minutes. After addition, the reaction mixture is stirred at −78° C. for20 minutes before it is warmed to −20° C. and stirred for 40 minutes.The mixture is cooled to −78° C. and 5,5′-dibromo-1,1′-dimethyl ester2,2′-thieno[3,2-b]thiophene-2,5-diylbis-benzoic acid (2.2 g, 3.8 mmol)added in one go. The mixture is then allowed to warm to 23° C. over 17hours. Water (150 cm³) is added and the mixture stirred at roomtemperature for 2 hours. The organic solvent is removed in vacuo to forma heavy precipitate. The resulting precipitate is filtered and washedwith acetone (50 cm³) and 40-60 petrol (50 cm³). The product iscollected and dried under vacuum to give[2-(5-{2-[bis-(4-octadecyl-phenyl)-hydroxy-methyl]-4-bromo-phenyl}-thieno[3,2-b]thiophen-2-yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol(4.2 g, 60%) as a yellow/cream solid. ¹H-NMR (300 MHz, CDCl₃) 0.85-0.95(12H, m), 1.17-1.42 (112H, m), 1.64 (8H, m), 2.64 (8H, t, J7.6), 3.29(2H, s), 6.05 (2H, s), 7.02-7.16 (18H, m), 7.19 (2H, d, J8.2), 7.45 (2H,dd, J8.2, 2.0).

2,9-Dibrormo=6,12-dihydro-6,6,12,12-tetrakis[4-(octadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3d]thiophene

To a solution of[2-(5-{2-[bis-(4-octadecyl-phenyl)-hydroxy-methyl]-4-bromo-phenyl}-thieno[3,2-b]thiophen-2-yl)-5-bromo-phenyl]-bis-(4-hexadecyl-phenyl)-methanol(4.0 g, 2.2 mmol) in dichloromethane (150 cm³) is addedp-toluenesulfonic acid (0.8 g, 4.4 mmol). The resulting suspension isstirred at 40° C. for 5 hours. The reaction mixture is allowed to coolto 23° C. and the solvent is removed in vacuo. The crude product isdissolved in a warm (35° C.) mixture of 40-60 petrol (200 cm³) anddichloromethane (40 cm³) and filtered through a silica plug. The silicaplug is further washed with the same mixture (300 cm³). The filtrate iscooled to 0° C. for 1 hour to form a heavy cream precipitate. Theresulting solid is collected by filtration. The crude product iscrystallized from methyl ethyl ketone to give2,9-dibromo-6,12-dihydro-6,6,12,12-tetrakis[4-(octadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiopheneas a yellow solid (2.4 g, 62%). ¹H-NMR (300 MHz, CDCl₃), 0.83-0.97 (12H,m), 1.20-1.39 (112H, m), 1.56-1.67 (8H, m), 2.52-2.62 (8H, m), 7.06-7.17(16H, m), 7.22 (2H, d, J8.1), 7.37-7.44 (2H, m), 7.51-7.56 (2H, m).

Poly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(octadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]alt-[2,5-thieno[3,2-b]thiophene]}(Polymer4)

Nitrogen gas is bubbled through a mixture ofbenzo[1,2-b:4,5-b′]-di-(2-bromo[4,4-bis-(4-octadecylphenyl)-4H-cyclopenta[2,1-b;3,4-b′]dithiophen-2-yl])(300 mg, 0.170 mmol), 2,5-bis-trimethylstannanyl-thieno[3,2-b]thiophene(78.0 mg, 0.170 mmol), tri-o-tolyl-phosphine (16.8 mg, 0.06 mmol) inanhydrous toluene (5 cm³) for 30 minutes.

Tris(dibenzylideneacetone)dipalladium(0) (10.6 mg, 0.02 mmol) is addedand the reaction mixture is then heated in a pre-heated oil bath at 100°C. for 10 minutes. Additional anhydrous toluene (2.7 cm³) is added tothe resulting viscous reaction mixture and heated for a further 10minutes. Bromobenzene (0.02 cm³) is added and the mixture heated at 100°C. for 30 minutes before addition of tributyl-phenyl-stannane (0.08cm³). The mixture heated at 100° C. for 1 hour. The mixture allowed tocool slightly and poured into stirred methanol (200 cm³) and the polymerprecipitate collected by filtration. The crude polymer is subjected tosequential Soxhlet extraction; acetone, 40-60 petrol, cyclohexanes andchloroform. The chloroform extract is poured into methanol (400 cm³) andthe polymer precipitate collected by filtration to givepoly{2,9-[6,12-dihydro-6,6,12,12-tetrakis[4-(octadecyl)phenyl]-indeno[1,2-b]indeno[2′,1′:4,5]thieno[2,3-d]thiophene]-alt-[2,5-thieno[3,2-b]thiophene]}(196mg, 84%) as a light brown solid. GPC (chlorobenzene, 50° C.)M_(n)=101,000 g/mol, M_(w)=334,000 g/mol.

Example 5 Transistor Fabrication and Measurement

Top-gate thin-film organic field-effect transistors (OFETs) werefabricated on glass substrates with photolithographically defined Ausource-drain electrodes. A 7 mg/cm³ solution of the organicsemiconductor in dichlorobenzene was spin-coated on top (an optionalannealing of the film is carried out at 100° C., 150° C. or 200° C. forbetween 1 and 5 minutes) followed by a spin-coated fluoropolymerdielectric material (Lisicon® D139 from Merck, Germany). Finally aphotolithographically defined Au gate electrode was deposited. Theelectrical characterization of the transistor devices was carried out inambient air atmosphere using computer controlled Agilent 4155CSemiconductor Parameter Analyser. Charge carrier mobility in thesaturation regime (μ_(sat)) was calculated for the compound.Field-effect mobility was calculated in the saturation regime(V_(d)>(V_(g)−V₀)) using equation (1):

$\begin{matrix}{( \frac{I_{s}^{sat}}{V_{g}} )_{V_{d}} = {\frac{{WC}_{i}}{L}{\mu^{sat}( {V_{g} - V_{0}} )}}} & (1)\end{matrix}$

where W is the channel width, L the channel length, C_(i) thecapacitance of insulating layer, V_(g) the gate voltage, V₀ the turn-onvoltage, and μ_(sat) is the charge carrier mobility in the saturationregime. Turn-on voltage (V₀) was determined as the onset of source-draincurrent.

The mobilities (μ_(sat)) for polymers 1, 2, 3 and 4 in top-gate OFETsare summarised in Table 1.

TABLE 1 Mobilities (μ_(sat)) for polymers 1, 2, 3 and 4 in top-gateOFETs. Polymer μ_(sat) (cm²/Vs) 1 1.84 2 0.33 3 0.21 4 0.72

FIG. 1 shows the transfer characteristics and the charge carriermobility of a top-gate OFET prepared as described above, wherein polymer1 is used as the organic semiconductor.

1. A polymer comprising one or more units of formula I

wherein R on each occurrence identically or differently denotesstraight-chain or branched alkyl with 16 to 24 C atoms, which isoptionally fluorinated.
 2. The polymer according to claim 1,characterized in that it comprises one or more units of formula IIa orIIb—[(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]—  IIa—[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]  IIb wherein U is aunit of formula I as defined in claim 1, Ar¹, Ar², Ar³ are, on eachoccurrence identically or differently, and independently of each other,aryl or heteroaryl that is different from U, preferably has 5 to 30 ringatoms and is optionally substituted, preferably by one or more groupsR^(S), R^(S) is on each occurrence identically or differently F, Br, Cl,—CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰, —NH₂,—NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H, —SO₂R⁰, —OH, —NO₂, —CF₃, —SF₅, optionallysubstituted silyl, carbyl or hydrocarbyl with 1 to 40 C atoms that isoptionally substituted and optionally comprises one or more heteroatoms, R⁰ and R⁰⁰ are independently of each other H or optionallysubstituted C₁₋₄₀ carbyl or hydrocarbyl, X⁰ is halogen, preferably F, Clor Br, a, b, c are on each occurrence identically or differently 0, 1 or2, d is on each occurrence identically or differently 0 or an integerfrom 1 to 10, wherein the polymer comprises at least one repeating unitof formula IIa or IIb wherein b is at least
 1. 3. The polymer accordingto claim 2, characterized in that it additionally comprises one or morerepeating units selected of formula IIIa or IIb—[(Ar¹)_(a)-(A^(c))_(b)—(Ar²)_(c)—(Ar³)_(d)]  IIIa-[(A^(c))_(b)—(Ar¹)_(a)-(A^(c))_(b)—(Ar²)_(c)(Ar³)_(d)]—  IIIb whereinAr¹, Ar², Ar³, a, b, c and d are as defined in claim 2, and A^(c) is anaryl or heteroaryl group that is different from U and Ar¹⁻³, has 5 to 30ring atoms, is optionally substituted by one or more groups R^(S) asdefined in claim 2, and is selected from aryl or heteroaryl groupshaving electron acceptor properties, wherein the polymer comprises atleast one repeating unit of formula IIIa or IIIb wherein b is atleast
 1. 4. The polymer according to claim 1, characterized in that itis selected of formula IV:

wherein A, B, C independently of each other denote a distinct unit offormula I, as defined in claim 1, x is >0 and ≦1, y is ≧0 and <1, z is≧0 and <1, x+y+z is 1, and n is an integer >1.
 5. The polymer accordingto claim 2, characterized in that it is selected from the followingformulae*—[(Ar¹—U—Ar²)_(x)—(Ar³)_(y)]_(n)—*  IVa*—[(Ar¹—U—Ar²)_(x)—(Ar³—Ar³)_(y)]_(n)—*  IVb*—[(Ar¹—U—Ar²)_(x)—(Ar³—Ar³—Ar³)_(y)]_(n)—*  IVc*—[(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]_(n)—*  IVd*—([(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)]_(x)—[(Ar¹)_(a)(A^(c))_(b)(Ar²)_(c)—(Ar³)_(d)]_(y))_(n)—*  IVe*—[(U—Ar¹—U)_(x)—(Ar²—Ar³)_(y)]_(n)—*  IVf*—[(U—Ar¹—U)_(x)—(Ar²—Ar³—Ar²)_(y)]_(n)—*  IVg*—[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)]_(n)—*  IVh*—([(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)]_(x)—[(A^(c))_(b)-(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(d)]_(y))_(n)*  IVi*—[(U—Ar¹)_(x)—(U—Ar²)_(y)—(U—Ar³)_(z)]_(n)—*  IVk wherein U, Ar¹, Ar²,Ar³, a, b, c and d have in each occurrence identically or differentlyone of the meanings given in claim 2, A^(c) is on each occurrenceidentically or differently, an aryl or heteroaryl group that isdifferent from U and Ar¹⁻³, has 5 to 30 ring atoms, is optionallysubstituted by one or more groups R^(S) as defined in claim 2, and isselected from aryl or heteroaryl groups having electron acceptorproperties, x is >0 and ≦1, y is ≧0 and <1, z is ≧0 and <1, x+y+z is 1,and n is an integer >1, wherein these polymers can be alternating orrandom copolymers, and wherein in formula IVd and IVe in at least one ofthe repeating units [(Ar¹)_(a)—(U)_(b)—(Ar²)_(c)—(Ar³)_(d)] and in atleast one of the repeating units[(Ar¹)_(a)-(A^(c))_(b)-(Ar²)_(c)—(Ar³)_(d)] b is at least 1 and whereinin formula IVh and IVi in at least one of the repeating units[(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(d)] and in at least one of therepeating units [(U)_(b)—(Ar¹)_(a)—(U)_(b)—(Ar²)_(d)] b is at least 1.6. The polymer according to claim 1, characterized in that it isselected of formula IV1

wherein R has the meaning of claim 1, D^(a), D^(b), D^(c), D^(d), D^(e)and D^(f) are independently of each other aryl or heteroaryl that haselectron donor properties and is different from formula I, preferablyhas 5 to 30 ring atoms, and is optionally substituted, preferably by oneor more groups R^(S), wherein R^(S) is on each occurrence identically ordifferently F, Br, Cl, —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(O)NR⁰R⁰⁰,—C(O)X⁰, —C(O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H, —SO₂R, —OH, —NO₂,—CF₃, —SF₅, optionally substituted silyl, carbyl or hydrocarbyl with 1to 40 C atoms that is optionally substituted and optionally comprisesone or more hetero atoms, i is >0 and <1, and m, o, p, q, r and s areindependently of each other ≧0 and <1, with at least one of m, o, p, q,r and s being >0.
 7. The polymer according to claim 2, wherein one ormore of Ar¹, Ar², and Ar³, denote aryl or heteroaryl selected from thegroup consisting of the following formulae

wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵, R¹⁶, R¹⁷ and R¹⁸ independently of eachother denote H or have one of the meanings of R^(S) as defined in claim2.
 8. The polymer according to claim 3, wherein A^(c) and/or Ar³ denotesaryl or heteroaryl selected from the group consisting of the followingformulae

wherein R¹¹, R¹², R¹³, R¹⁴, R¹⁵ and R¹⁶ independently of each otherdenote H or have one of the meanings of R^(S) wherein R^(S) is on eachoccurrence identically or differently F, Br, Cl, —CN, —NC, —NCO, —NCS,—OCN, —SCN, —C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰,—SO₃H, —SO₂R, —OH, —NO₂, —CF₃, —SF₅, optionally substituted silyl,carbyl or hydrocarbyl with 1 to 40 C atoms that is optionallysubstituted and optionally comprises one or more hetero atoms.
 9. Thepolymer according to claim 6, characterized in that the donor unitsD^(a), D^(b), D^(c), D^(d), D^(e) and D^(f) are selected from thefollowing formulae:

wherein X¹¹ and X¹² denote independently of each other O, S, Se orNR^(S), with R^(S) wherein R^(S) is on each occurrence identically ordifferently F, Br, Cl, —CN, —NC, —NCO, —NCS, —OCN, —SCN, —C(O)NR⁰R⁰⁰,—C(O)X⁰, —C(O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H, —SO₂R⁰, —OH, —NO₂,—CF₃, —SF₅, optionally substituted silyl, carbyl or hydrocarbyl with 1to 40 C atoms that is optionally substituted and optionally comprisesone or more hetero atoms, and R¹¹ to R²² independently of each otherdenote H or have one of the meanings of R^(S).
 10. The polymer accordingto claim 4, characterized in that it is selected of formula VR⁵-chain-R⁶  V wherein “chain” is a polymer chain selected of formulaeIV, as defined in claim 4, R⁵ and R⁶ have independently of each otherone of the meanings of R^(S) wherein R^(S) is on each occurrenceidentically or differently F, Br, Cl, —CN, —NC, —NCO, —NCS, —OCN, —SCN,—C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰, —SO₃H, —SO₂R⁰,—OH, —NO₂, —CF₃, —SF₅, optionally substituted silyl, carbyl orhydrocarbyl with 1 to 40 C atoms that is optionally substituted andoptionally comprises one or more hetero atoms, or denote, independentlyof each other, H, F, Br, Cl, I, —CH₂Cl, —CHO, —CR′═CR″₂, —SiR′R″R′″,—SiR′X′X″, —SiR′R″X′, —SnR′R″R′″, —BR′R″, —B(OR′)(OR″), —B(OH)₂,—O—SO₂—R′, —C≡CH, —C≡C—SiR′₃, —ZnX′, or an endcap group, wherein X′ andX″ denote halogen, R⁰ and R⁰⁰ are independently of each other H oroptionally substituted C₁₋₄₀ carbyl or hydrocarbyl, X⁰ is halogen,preferably F, Cl or Br, and R′, R″ and R′″ have independently of eachother one of the meanings of R⁰, and two of R′, R″ and R′″ may also forma ring together with the hetero atom to which they are attached.
 11. Amixture or polymer blend comprising one or more polymers according toclaim 1 and one or more compounds or polymers having semiconducting,charge transport, hole/electron transport, hole/electron blocking,electrically conducting, photoconducting or light emitting properties.12. The mixture or polymer blend according to claim 11, characterized inthat it comprises one or more polymers according to claim 1 and one ormore n-type organic semiconductor compounds.
 13. The mixture or polymerblend according to claim 12, characterized in that the n-type organicsemiconductor compound is a fullerene or substituted fullerene.
 14. Aformulation comprising one or more polymers, mixtures according to claim1, and one or more solvents, preferably selected from organic solvents.15. (canceled)
 16. A charge transport, semiconducting, electricallyconducting, photoconducting or light emitting material comprising apolymer, according to claim
 1. 17. An optical, electrooptical,electronic, electroluminescent or photoluminescent device, or acomponent thereof, or an assembly comprising it, which comprises acharge transport, semiconducting, electrically conducting,photoconducting or light emitting material, according to claim
 16. 18. Adevice, a component thereof, or an assembly comprising it according toclaim 17, wherein the device is selected from organic field effecttransistors (OFET), thin film transistors (TFT), organic light emittingdiodes (OLED), organic light emitting transistors (OLET), organicphotovoltaic devices (OPV), organic photodetectors (OPD), organic solarcells, laser diodes, Schottky diodes, and photoconductors, the componentis selected from charge injection layers, charge transport layers,interlayers, planarising layers, antistatic films, polymer electrolytemembranes (PEM), conducting substrates, conducting patterns, and theassembly is selected from integrated circuits (IC), radio frequencyidentification (RFID) tags or security markings or security devicescontaining them, flat panel displays or backlights thereof,electrophotographic devices, electrophotographic recording devices,organic memory devices, sensor devices, biosensors and biochips.
 19. Thedevice according to claim 18, which is an OFET, bulk heterojunction(BHJ) OPV device or inverted BHJ OPV device.
 20. A monomer of formulaVIa, VIb or VIcR⁷—(Ar¹)_(a)—U—(Ar²)_(c)—R⁸  VIaR₇—U—(Ar¹)_(a)—U—R⁸  VIbR⁷—U-(D^(a))_(a1)(D^(b))_(b1-(D)^(c))_(c1)-(D^(d))_(d1)-(D^(e))_(e1)-(D^(f))_(f1)-R⁸  VIc wherein U is aunit of formula I,

wherein R on each occurrence identically or differently denotesstraight-chain or branched alkyl with 16 to 24 C atoms, which isoptionally fluorinated. Ar¹, Ar² are, on each occurrence identically ordifferently, and independently of each other, aryl or heteroaryl that isdifferent from U, preferably has 5 to 30 ring atoms and is optionallysubstituted, preferably by one or more groups R^(S), R^(S) is on eachoccurrence identically or differently F, Br, Cl, —CN, —NC, —NCO, —NCS,—OCN, —SCN, —C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰, —NH₂, —NR⁰R⁰⁰, —SH, —SR⁰,—SO₃H, —SO₂R⁰, —OH, —NO₂, —CF₃, —SF₅, optionally substituted silyl,carbyl or hydrocarbyl with 1 to 40 C atoms that is optionallysubstituted and optionally comprises one or more hetero atoms, R⁰ andR⁰⁰ are independently of each other H or optionally substituted C₁₋₄₀carbyl or hydrocarbyl, X⁰ is halogen, preferably F, Cl or Br, a, c areon each occurrence identically or differently 0, 1 or 2, D^(a), D^(b),D^(c), D^(d), D^(e) and D^(f) are independently of each other aryl orheteroaryl that has electron donor properties and is different fromformula I, preferably has 5 to 30 ring atoms, and is optionallysubstituted, preferably by one or more groups R^(S), a1, b1, c1, d1, e1and f1 are independently of each other 0 or 1, with at least one of a1,b1, c1, d1, e1 and f1 being 1, and R⁷ and R⁸ are selected from the groupconsisting of Cl, Br, I, O-tosylate, O-triflate, O-mesylate,O-nonaflate, —SiMe₂F, —SiMeF₂, —O—SO₂Z¹, —B(OZ²)₂, —CZ³═C(Z³)₂, —C≡CH,—C≡CSi(Z¹)₃, —ZnX⁰ and —Sn(Z⁴)3, wherein X⁰ is halogen, preferably Cl,Br or I, Z¹⁻⁴ are selected from the group consisting of alkyl and aryl,each being optionally substituted, and two groups Z² may also togetherform a cyclic group.
 21. The monomer according to claim 20, which isselected from the following formulaeR⁷—Ar¹—U—Ar²—R⁸  VIIR⁷—U—R⁸  VI2R⁷—Ar¹—U—R⁸  VI3R⁷—U—Ar²—R⁸  VI4R⁷—U—Ar¹—U—R⁸  VI5R⁷—U-D^(a)-R⁸  VI6 wherein U, D^(a), Ar¹, Ar², R⁷ and R⁸ are as definedin claim
 20. 22. A process of preparing a polymer according to claim 1,by coupling one or more monomers of the formula VIa, VIb or VIc,R⁷—(Ar¹)_(a)—U—(Ar²)_(c)-R⁸  VIaR⁷—U—(Ar^(l))_(a)—U—R⁸  VIbR⁷—U-(D^(a))_(a1)-(D^(b))_(b1-(D)^(c))^(c1)-(D^(d))_(d1)-(D^(e))_(e1)-(D^(f))_(f1)-R⁸  VIc wherein U is aunit of formula I,

wherein R on each occurrence identically or differently denotesstraight-chain or branched alkyl with 16 to 24 C atoms, which isoptionally fluorinated. Ar¹, Ar² are, on each occurrence identically ordifferently, and independently of each other, aryl or heteroaryl that isdifferent from U, preferably has 5 to 30 ring atoms and is optionallysubstituted, preferably by one or more groups R^(S), R^(S) is on eachoccurrence identically or differently F, Br, Cl, —CN, —NC, —NCO, —NCS,—OCN, —SCN, —C(O)NR⁰R⁰⁰, —C(O)X⁰, —C(O)R⁰, —NH₂—NR⁰R⁰⁰, —SH, —SR⁰,—SO₃H, —SO₂R⁰, —OH, —NO₂, —CF₃, —SF₅, optionally substituted silyl,carbyl or hydrocarbyl with 1 to 40 C atoms that is optionallysubstituted and optionally comprises one or more hetero atoms, R⁰ andR⁰⁰ are independently of each other H or optionally substituted C₁₋₄₀carbyl or hydrocarbyl, X⁰ is halogen, preferably F, Cl or Br, a, c areon each occurrence identically or differently 0, 1 or 2, D^(a), D^(b),D^(c), D^(d), D^(e) and D^(f) are independently of each other aryl orheteroaryl that has electron donor properties and is different fromformula I, preferably has 5 to 30 ring atoms, and is optionallysubstituted, preferably by one or more groups R^(S), a1, b1, c1, d1, e1and f1 are independently of each other 0 or 1, with at least one of a1,b1, c1, d1, e1 and f1 being 1, and R⁷ and R⁸ are selected from Cl, Br,I, —B(OZ²)₂ and —Sn(Z⁴)₃, with each other and/or with one or moremonomers selected from the following formulaeR⁷—(Ar¹)_(a-A) ^(c)-(Ar²)_(c)—R⁸  VIIIR⁷—Ar¹—R⁸  IXR⁷—Ar³—R⁸  XR⁷-D^(a)-R⁸  XI wherein D^(a), Ar¹, Ar², a and c are as defined above,Ar³ is as defined for Ar¹, A^(c) is as defined above, and R⁷ and R⁸ areselected from Cl, Br, I, —B(OZ²)₂ and —Sn(Z⁴)³, in an aryl-aryl couplingreaction.
 23. The polymer according to claim 2, characterized in that itis selected of formula IV:

wherein A, B, C independently of each other denote a distinct unit offormula IIa, or IIb, as defined in claim 2, x is >0 and ≦1, y is ≧0 and<1, z is ≧0 and <1, x+y+z is 1, and n is an integer >1.